BibTeX
@MISC{04director,
author = {},
title = {Director},
year = {2004}
}
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Abstract
The pixel element which is an integrated combination of a p-i-n diode with a thin film transistor (TFT) is used to produce image sensor arrays in scanning and displays technologies, necessitating the deposition of hydrogenated silicon based semiconducting and insulating thin films such as a-Si:H, a-SiNx:H over large area. The widely used techniques to achieve this goal is the plasma enhanced chemical vapor deposition (PECVD) due to its large area and low temperature ( ≤ 300 °C) abilities. In particular, PECVD has proved to be able to deposit both high quality insulator (a-SiNx:H) and active layer of p-i-n diode (intrinsic hydrogenated amorphous silicon carbide, a-SiCx:H) and by sequential deposition, it is possible to minimize the interface related problems, which play an important role in metal insulator semiconductor (MIS) and TFT structures. PECVD deposited a-SiCx:H films over p-type crystal Si and metal substrates (MIS and MIM) were investigated by both admittance spectroscopy (Capacitance or conductance vs. voltage, temperature or frequency measurements) and Deep Level
Keyphrases
p-i-n diode large area important role frequency measurement high quality insulator thin film thin film transistor amorphous silicon carbide image sensor array chemical vapor deposition sequential deposition conductance v active layer metal insulator semiconductor p-type crystal si pixel element deep level integrated combination display technology low temperature tft structure admittance spectroscopy metal substrate
