POUR L'OBTENTION DU GRADE DE DOCTEUR ÈS SCIENCES PAR

DMCA

POUR L'OBTENTION DU GRADE DE DOCTEUR ÈS SCIENCES PAR

Cached

by Louis Harik , Prof M. A. Ionescu , Prof P. Fazan , Prof C. Lallement , Marija Blagojevic

Citations

6	A low voltage hybrid bulk/SOI CMOS active pixel image sensor,” - Xu, Zhang, et al. - 2001
2	Surface states and 1/f noise in mos transistors, Electron Devices - Abowitz, Arnold, et al. - 1967
2	Theory and experiments on the 1/f surface noise of mos insulated-gate field-effect transistors, Electron Devices - Sah - 1964 (Show Context) Citation Context ...nanometers to few tens of nanometers. Thus there is no body region of the MOSFET to be charged and as a consequence no floating body effects like the kink effect, light effect and the history effect( =-=[8]-=-). As a matter of fact, the fully depleted was designed as an effort to suppress the floating body effects. It may be assumed that the fully depleted SOI MOSFET are more suited for analog circuits imp...
2	on Power Consumptions during the past 40 years - Trend (Show Context) Citation Context ...nnel due to fluctuations in the surface potential. The fluctuations of the latter are caused by the traps at the Si/SiO2104 All the Noise Sources interface which traps and releases carriers randomly =-=[1, 30, 26, 3]-=-. From this theory the power spectral density of such a noise can be formulated as follows: Svf(f) = K1 C 2 ox 1 1 WL fc (4.4) The exponent c is between 0.7 and 1.2 for an n-channel device. K1 is inde...
2	consumption versus supply voltage - Power (Show Context) Citation Context ...nnel due to fluctuations in the surface potential. The fluctuations of the latter are caused by the traps at the Si/SiO2104 All the Noise Sources interface which traps and releases carriers randomly =-=[1, 30, 26, 3]-=-. From this theory the power spectral density of such a noise can be formulated as follows: Svf(f) = K1 C 2 ox 1 1 WL fc (4.4) The exponent c is between 0.7 and 1.2 for an n-channel device. K1 is inde...
2	depletion and the channel regions in a partially depleted SOI MOSFET - Neutral (Show Context) Citation Context ...nnel due to fluctuations in the surface potential. The fluctuations of the latter are caused by the traps at the Si/SiO2104 All the Noise Sources interface which traps and releases carriers randomly =-=[1, 30, 26, 3]-=-. From this theory the power spectral density of such a noise can be formulated as follows: Svf(f) = K1 C 2 ox 1 1 WL fc (4.4) The exponent c is between 0.7 and 1.2 for an n-channel device. K1 is inde...
2	current of a floating body SOI MOS when subject to a light pulse - Drain (Show Context) Citation Context ...nnel due to fluctuations in the surface potential. The fluctuations of the latter are caused by the traps at the Si/SiO2104 All the Noise Sources interface which traps and releases carriers randomly =-=[1, 30, 26, 3]-=-. From this theory the power spectral density of such a noise can be formulated as follows: Svf(f) = K1 C 2 ox 1 1 WL fc (4.4) The exponent c is between 0.7 and 1.2 for an n-channel device. K1 is inde...
2	section of a PN photodiode integrated in a one-well CMOS chip - Cross (Show Context) Citation Context ...nnel due to fluctuations in the surface potential. The fluctuations of the latter are caused by the traps at the Si/SiO2104 All the Noise Sources interface which traps and releases carriers randomly =-=[1, 30, 26, 3]-=-. From this theory the power spectral density of such a noise can be formulated as follows: Svf(f) = K1 C 2 ox 1 1 WL fc (4.4) The exponent c is between 0.7 and 1.2 for an n-channel device. K1 is inde...
2	section and layout of a PNP phototransistor with reduced Base-Collector capacitance - Cross (Show Context) Citation Context ...nnel due to fluctuations in the surface potential. The fluctuations of the latter are caused by the traps at the Si/SiO2104 All the Noise Sources interface which traps and releases carriers randomly =-=[1, 30, 26, 3]-=-. From this theory the power spectral density of such a noise can be formulated as follows: Svf(f) = K1 C 2 ox 1 1 WL fc (4.4) The exponent c is between 0.7 and 1.2 for an n-channel device. K1 is inde...
2	gain due to illumination for channel lengths 1µm and 20µm. ( [58 - Current (Show Context) Citation Context ...nnel due to fluctuations in the surface potential. The fluctuations of the latter are caused by the traps at the Si/SiO2104 All the Noise Sources interface which traps and releases carriers randomly =-=[1, 30, 26, 3]-=-. From this theory the power spectral density of such a noise can be formulated as follows: Svf(f) = K1 C 2 ox 1 1 WL fc (4.4) The exponent c is between 0.7 and 1.2 for an n-channel device. K1 is inde...
2	current measured before and after charge pumping showing a shift in the threshold voltage (adapted from [33 - Drain (Show Context) Citation Context ...the structure, SOI devices have lower current leakage, less parasitic capacitances which results in higher speed performance of the SOI CMOS compared to the bulk counterpart. Figure 1.2 (adapted from =-=[2]-=-) shows a comparison between an SOI and a bulk CMOS inverter using a 0.35 µm transistors. As we lower the supply voltage the power dissipated in the inverter drops in both cases as well as the delay p...
2	drain current and its variations as a function of the ’reading’ gate voltage (VGR) after the application of a single charge pumping pulse - DC (Show Context) Citation Context ...the structure, SOI devices have lower current leakage, less parasitic capacitances which results in higher speed performance of the SOI CMOS compared to the bulk counterpart. Figure 1.2 (adapted from =-=[2]-=-) shows a comparison between an SOI and a bulk CMOS inverter using a 0.35 µm transistors. As we lower the supply voltage the power dissipated in the inverter drops in both cases as well as the delay p...
2	spectral density with an OSR of 2500 - Power (Show Context) Citation Context ...nnel due to fluctuations in the surface potential. The fluctuations of the latter are caused by the traps at the Si/SiO2104 All the Noise Sources interface which traps and releases carriers randomly =-=[1, 30, 26, 3]-=-. From this theory the power spectral density of such a noise can be formulated as follows: Svf(f) = K1 C 2 ox 1 1 WL fc (4.4) The exponent c is between 0.7 and 1.2 for an n-channel device. K1 is inde...
2	spectral density with an OSR of 50 - Power (Show Context) Citation Context ...nnel due to fluctuations in the surface potential. The fluctuations of the latter are caused by the traps at the Si/SiO2104 All the Noise Sources interface which traps and releases carriers randomly =-=[1, 30, 26, 3]-=-. From this theory the power spectral density of such a noise can be formulated as follows: Svf(f) = K1 C 2 ox 1 1 WL fc (4.4) The exponent c is between 0.7 and 1.2 for an n-channel device. K1 is inde...
2	diagram showing the model of the photogeneration and charge pumping - Block (Show Context) Citation Context ...nnel due to fluctuations in the surface potential. The fluctuations of the latter are caused by the traps at the Si/SiO2104 All the Noise Sources interface which traps and releases carriers randomly =-=[1, 30, 26, 3]-=-. From this theory the power spectral density of such a noise can be formulated as follows: Svf(f) = K1 C 2 ox 1 1 WL fc (4.4) The exponent c is between 0.7 and 1.2 for an n-channel device. K1 is inde...
2	diagram of the synchronous pixel - Block (Show Context) Citation Context ...nnel due to fluctuations in the surface potential. The fluctuations of the latter are caused by the traps at the Si/SiO2104 All the Noise Sources interface which traps and releases carriers randomly =-=[1, 30, 26, 3]-=-. From this theory the power spectral density of such a noise can be formulated as follows: Svf(f) = K1 C 2 ox 1 1 WL fc (4.4) The exponent c is between 0.7 and 1.2 for an n-channel device. K1 is inde...
2	source noises totally filtered by the delta sigma modulator - Current (Show Context) Citation Context ... is a technique used to get not only the density of traps at the Si/SiO2 interface, but also their energy distribution and even also the mean value of the capture cross section of electrons and holes =-=[4, 17, 14, 9, 46]-=-. In this section we will review the different parameters that affect the charge pumping in both bulk and SOI MOSFET. In section 2.4 we will focus on the more general aspects of charge pumping and the...
2	noise at the phototransistor is not filtered by the delta sigma modulator - Flicker (Show Context) Citation Context ... is a technique used to get not only the density of traps at the Si/SiO2 interface, but also their energy distribution and even also the mean value of the capture cross section of electrons and holes =-=[4, 17, 14, 9, 46]-=-. In this section we will review the different parameters that affect the charge pumping in both bulk and SOI MOSFET. In section 2.4 we will focus on the more general aspects of charge pumping and the...
1	Cmos camera with in-pixel temporal change detection and adc, Solid-State Circuits - Proceedings - 1998