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Technology development of 4H-SiC RF BJTs with 5GHz fMAX
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@MISC{Zeghbroeck_technologydevelopment,
author = {Bart Van Zeghbroeck and Ivan Perez and Feng Zhao and John Torvik},
title = {Technology development of 4H-SiC RF BJTs with 5GHz fMAX},
year = {}
}
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Abstract
4H-SiC RF BJTs were developed on a semi-insulating (>105 Ω-cm) substrate using an triple mesa-etch and interdigitated emitter-base finger design. The sheet conductance of the emitter layer was measured during the etch to accurately determine the location of the base-emitter interface. On-wafer small signal s-parameter measurements were performed on a 4-finger device with 3 μm emitter stripe width and 150 μm finger length. Both, the current gain and unilateral power gain, were extracted from the measured s-parameters, yielding an fT of 7 GHz and an fMAX of 5.2 GHz biased in common-emitter configuration at JE = 10.6 kA/cm2 and VCE = 20 V. The maximum available power gain (GMAX) is 18.6-dB at 500 MHz and 12.4-dB at 1 GHz, demonstrating the potential of 4H-SiC BJTs for both UHF and L-band applications. Small-periphery (4x150μm) devices were tested using on-wafer load pull measurements up to 1.5GHz. Under pulsed conditions, the devices exhibited 10dB of power gain at 1GHz and a peak power density of 2.3W/mm (1.4W) with less than 0.1dB pulse droop for a 100μs pulse width and a 1 % duty cycle. The power gain decreased to 8dB at 1GHz under CW conditions at a power density of 1.6W/mm (1W).
Keyphrases
4h-sic rf bjts technology development power gain current gain sheet conductance power density maximum available power gain on-wafer small signal s-parameter measurement pulse width interdigitated emitter-base finger design cw condition 4-finger device on-wafer load pull peak power density duty cycle finger length emitter layer ka cm2 base-emitter interface unilateral power gain 4h-sic bjts pulsed condition l-band application common-emitter configuration pulse droop triple mesa-etch
