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O Japanese Society of Electron Microscopy Journal of Electron Microscopy 48(5): 545-554 (1999) Full-length paper A TEM study of local non-uniformities in epitaxial 2H-AIN films on Si(111) substrate (1999)
BibTeX
@MISC{Kaiser99ojapanese,
author = {Ute Kaiser and I. I. Khodos and J. Jinschek and W. Richter},
title = {O Japanese Society of Electron Microscopy Journal of Electron Microscopy 48(5): 545-554 (1999) Full-length paper A TEM study of local non-uniformities in epitaxial 2H-AIN films on Si(111) substrate},
year = {1999}
}
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Abstract
Abstract Various non-uniformities of A1N thin films grown epitaxially on Si(lll) substrates by plasma-assisted molecular beam epitaxy (MBE) are characterised by a combination of transmission electron microscopy (TEM), energy-dispersive X-ray spectroscopy (EDX), convergent-beam electron diffraction (CBED), and secondary ion mass spectrometry (SIMS). Their appearance is interpreted in relation to main growth parameters such as substrate temperature, nucleation temperature and the flux rate ratio of Al/N. It has been proved that all films investigated are hexagonal and do not contain cubic AlN. We demonstrate that the creation of hillocks inside the layer of voids in the substrate and of crystals on top of the AlN film are closely connected with each other and depend mainly on the Al/N flux rate ratio. Domains of different polarity were found when increasing the nudeation temperature.
