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Integrated Circuit Technology Options for RFIC’sPresent Status and Future Directions (1998)
| Venue: | IEEE Journal of Solid-State Circuits |
| Citations: | 19 - 0 self |
BibTeX
@ARTICLE{Larson98integratedcircuit,
author = {Lawrence E. Larson and Senior Member},
title = {Integrated Circuit Technology Options for RFIC’sPresent Status and Future Directions},
journal = {IEEE Journal of Solid-State Circuits},
year = {1998},
pages = {387--399}
}
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Abstract
Abstract—This paper will summarize the technology tradeoffs that are involved in the implementation of radio frequency integrated circuits for wireless communications. Radio transceiver circuits have a very broad range of requirements—including noise figure, linearity, gain, phase noise, and power dissipation. The advantages and disadvantages of each of the competing technologies—Si CMOS and bipolar junction transistors (BJT’s), Si/SiGe HBT’s and GaAs MESFET’s, PHEMTS and HBT’s will be examined in light of these requirements. Index Terms—CMOS RF, low-noise amplifiers, monolithic radio architectures, radio receivers, wireless communications. I.
Keyphrases
future direction rfic spresent status circuit technology option wireless communication broad range si sige hbt radio receiver monolithic radio architecture technology tradeoff radio frequency gaas mesfet radio transceiver circuit power dissipation phase noise index term cmos rf low-noise amplifier technology si cmos bipolar junction transistor noise figure
