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CXXXX American Chemical Society Integrated Circuits and Logic Operations Based on Single-Layer MoS2
BibTeX
@MISC{Radisavljevic_cxxxxamerican,
author = {Branimir Radisavljevic and Michael Brian Whitwick and Andras Kis},
title = {CXXXX American Chemical Society Integrated Circuits and Logic Operations Based on Single-Layer MoS2},
year = {}
}
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Abstract
wo-dimensional materials1 are extre-mely interesting as building blocks of next-generation nanoelectronic de-vices for simple geometric reasons. It is in principle much easier to fabricate circuits and other complex structures by tailoring 2D layers into desired forms than to deposit or grow nanowires or nanotubes with pre-dictable electrical properties in predefined positions. Because of their atomic scale thickness, two-dimensional materials also offer a higher degree of electrostatic control than bulk materials,2 making them interest-ing for fabrication of low-power electronic devices.3 Without any doubt, the most widely studied two-dimensional material to date is graphene,4 due to its high intrinsic low-temperature mobility of at least 200 000 cm2/(V s),5 the presence ofmassless Dirac fermions,6 and a wealth of interesting physical phenomena such as the fractional quantum Hall effect.7 In its untreated form however, graphene has no band gap, result-ing in small current on/off ratios in gra-phene field effect transistors. Graphene band gaps up to 400 meV have been intro-duced by shaping them into ribbons8,9 or applying high transverse electric fields to bilayer graphene.10,11 This not only in-creases complexity but also results in sig-nificant mobility reduction or loss of coherence12 or requires voltages exceeding 100 V.10 Because of this, it is very difficult to build logic circuits based on graphene that would operate at room temperature with low stand-by power dissipation. Logic circuits and the ability to amplify electrical signals form the functional back-bone of electronics along with the possibi-lity to integrate multiple elements on the same chip. Here, we demonstrate that sin-gle-layer MoS2, a two-dimensional semicon-ductor with a direct band gap of 1.8 eV (ref 13), has the capability to amplify signals and perform basic logic operations in sim-ple integrated circuits composed of two MoS2 transistors. 3 Our integrated circuit is composed of two n-type transistors realized on the same two-dimensional crystal of monolayerMoS2, as schematically depicted in
Keyphrases
logic operation single-layer mos2 logic circuit two-dimensional material gra-phene field effect transistor bulk material functional back-bone high intrinsic low-temperature mobility two-dimensional crystal direct band gap two-dimensional semicon-ductor presence ofmassless dirac fermion band gap physical phenomenon building block sim-ple integrated circuit desired form sig-nificant mobility reduction basic logic operation low stand-by power dissipation graphene band wo-dimensional materials1 next-generation nanoelectronic de-vices electrical signal electrostatic control pre-dictable electrical property electronic device complex structure high transverse electric field predefined position integrated circuit n-type transistor multiple element simple geometric reason sin-gle-layer mos2 in-creases complexity untreated form mos2 transistor fractional quantum hall effect room temperature atomic scale thickness
