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New Manufacturing Concepts for Ultra-Thin Silicon and Gallium Arsenide Substrates
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BibTeX
@MISC{Bock_newmanufacturing,
author = {K. Bock and M. Bleier and O. Köthe},
title = {New Manufacturing Concepts for Ultra-Thin Silicon and Gallium Arsenide Substrates},
year = {}
}
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Abstract
The paper reports on new manufacturing concepts for handling and processing of thin semiconductor substrates. Technologies which were formerly demonstrated for silicon wafers were recently transferred to GaAs substrates and are presented in this paper. As a result of the development work the feasibility for preparing 20 µm thin GaAs wafers showing mechanical flexibility is proven. Due to the application of “Dicing-by-Thinning ” concept micro defects at the edges of ultra thin GaAs chips are practically eliminated. Furthermore a new wafer support technique is proposed: “Smart Carriers ” use electrostatically activated carrier plates for temporary bonding of device and support substrates. Their first applications for handling and processing of thin GaAs wafers are presented in the paper.
Keyphrases
new manufacturing concept ultra-thin silicon gallium arsenide substrate thin gaas wafer paper report support substrate temporary bonding mechanical flexibility silicon wafer dicing-by-thinning concept micro defect carrier plate ultra thin gaas chip new wafer support technique first application development work gaas substrate smart carrier thin semiconductor substrate
