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**1 - 3**of**3**### This article has been accepted for publication in a future issue of this journal, but has not been fully edited. Content may change prior to final publication. Analysis of Class DE amplifier with Nonlinear Shunt Capacitances at Any Grading Coefficient for

"... This paper gives analytical expressions for the class DE amplifier with nonlinear shunt capacitances at any grading coefficient m of the MOSFET body junction diode at a high value of the loaded quality factor Q of the output resonant circuit, zero equivalent series resistance of all the components, ..."

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This paper gives analytical expressions for the class DE amplifier with nonlinear shunt capacitances at any grading coefficient m of the MOSFET body junction diode at a high value of the loaded quality factor Q of the output resonant circuit, zero equivalent series resistance of all the components, and switch-on duty ratio D = 0.25. No external shunt capacitance is used in the analysis of the class DE amplifier. The grading coefficient determines the degree of nonlinearity of the MOSFET shunt capacitances. When the grading coefficient is different from the design specifications, the waveforms of the switch voltages do not satisfy the class E switching conditions, reducing the power conversion efficiency. Therefore, the grading coefficient m is an important parameter to satisfy the class E switching conditions. It is shown analytically that the dc supply voltage and current are always proportional to the amplitude of the output voltage and current. The output power capability is never affected by any nonlinearity of the shunt capacitances. We obtain analytical design equations, which are validated by PSpice simulations and laboratory experiments considered with the gate-drain capacitance effect.

### Analysis of Class-DE Amplifier With Linear and Nonlinear Shunt Capacitances at 25 % Duty Ratio

"... switching operation within class-DE amplifiers can be easily achieved by adding external shunt capacitances. This paper gives the analytical expressions for the designs of the class-DE amplifiers with the shunt capacitances composed of linear and nonlinear capacitances for any grading coefficient of ..."

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switching operation within class-DE amplifiers can be easily achieved by adding external shunt capacitances. This paper gives the analytical expressions for the designs of the class-DE amplifiers with the shunt capacitances composed of linear and nonlinear capacitances for any grading coefficient of MOSFET body junction diodes at the switch-on duty ratio. In the analysis, an equivalent linear shunt capacitance of the non-linear MOSFET drain–source parasitic capacitances is derived. Analytical results show good agreements with the simulation and experimental ones, which validate our analysis. Index Terms—Class-DE power amplifier, class-E zero-voltage switching (ZVS)/zero-derivative switching (ZDS) conditions, equivalent linear shunt capacitance, high efficiency, nonlinear MOSFET drain–source parasitic capacitance. I.

### Analysis of Class DE Amplifier With Nonlinear Shunt Capacitances at Any Grading Coefficient for

"... Abstract—This paper gives analytical expressions for the class disruptive effect (DE) amplifier with nonlinear shunt capacitances at any grading coefficient m of the MOSFET body junction diode at a high value of the loaded quality factor Q of the output resonant circuit, zero equivalent series resis ..."

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Abstract—This paper gives analytical expressions for the class disruptive effect (DE) amplifier with nonlinear shunt capacitances at any grading coefficient m of the MOSFET body junction diode at a high value of the loaded quality factor Q of the output resonant circuit, zero equivalent series resistance of all the components, and switch-on duty ratio D = 0.25. No external shunt capacitance is used in the analysis of the class DE amplifier. The grading coeffi-cient determines the degree of nonlinearity of the MOSFET shunt capacitances. When the grading coefficient is different from the design specifications, the waveforms of the switch voltages do not satisfy the class E switching conditions, reducing the power conver-sion efficiency. Therefore, the grading coefficient m is an important parameter to satisfy the class E switching conditions. It is shown analytically that the dc supply voltage and current are always pro-portional to the amplitude of the output voltage and current. The output power capability is never affected by any nonlinearity of the shunt capacitances. We obtain analytical design equations, which are validated by PSPICE simulations and laboratory experiments considered with the gate-drain capacitance effect. Index Terms—Class disruptive effect (DE) power amplifier, class E zero-voltage switching (ZVS)/zero-derivative switching (ZDS), grading coefficient of junction capacitance, high Q, MOSFET gate-drain capacitance, nonlinear MOSFET drain-source parasitic ca-pacitance, RF power amplifier. I.