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System and Circuit Aspects of Nanoelectronics
 ESSCIRC'98
, 1998
"... This paper analyzes the impact of nanoscale technology on future circuit design and describes several prototypes of logic and memory applications. Resonant tunneling transistors, single electron transistors, and quantum cellular automata are reviewed as relevant nanoelectronic device categories. In ..."
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This paper analyzes the impact of nanoscale technology on future circuit design and describes several prototypes of logic and memory applications. Resonant tunneling transistors, single electron transistors, and quantum cellular automata are reviewed as relevant nanoelectronic device categories. In regard to the limited interconnectivity and the sensitivity of the devices to parameter variations we discuss bit level systolic arrays, a propagate instruction array processor, and fault tolerant logic. Furthermore, functional integration, that is the possibility of exploiting quantum effects to obtain a function specific behavior, is illustrated as design technique by compact memory cells and logic families with reduced circuit complexity.
Adiabatic Switching and Power Dissipation of Dynamic Resonant Tunneling Device Logic Circuits
 In Proceedings of the 3rd Workshop on Innovative Circuits and Systems for Nanoelectronics. TU Munich, Lehrstuhl für Technische Elektronik
, 1998
"... Dynamic power dissipation is an important aspect of resonant tunneling device circuit design, especially if clock frequencies beyond 1 GHz are intended. In this paper we investigate the different sources of power dissipation of a dynamic resonant tunneling device logic family. Due to the selflatchi ..."
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Dynamic power dissipation is an important aspect of resonant tunneling device circuit design, especially if clock frequencies beyond 1 GHz are intended. In this paper we investigate the different sources of power dissipation of a dynamic resonant tunneling device logic family. Due to the selflatching behavior of the gates and the bitlevel pipelined circuit style an adiabatic clocking scheme is ideally suited to reduce the dynamic switching energy. Extrapolations for laterally scaled resonant tunneling devices predict a total power dissipation below 20 W per gate at 5 GHz for a minimum feature size of 200 nm and a peak current density of j P = 10 kA=cm 2 . Compared to a nonadiabatic operation this is a reduction of the switching energy by about one order of magnitude. 1. Introduction Resonant tunneling device circuits composed of a dynamic latch and an embedded logic input stage play an important role as precursors for future nanoscale circuits with reduced complexity. Recently, ...
Calculus of the Ideas Immanent in Nervous Activity by
"... Abstract—This is an indepth review paper on silicon implementations of threshold logic gates, covering several decades (i.e., from the early days till now). The paper starts by describing early MOS implementations followed by different VLSI solutions including: capacitive (switched capacitor and fl ..."
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Abstract—This is an indepth review paper on silicon implementations of threshold logic gates, covering several decades (i.e., from the early days till now). The paper starts by describing early MOS implementations followed by different VLSI solutions including: capacitive (switched capacitor and floating gate with their variations), conductance/current (pseudonMOS and outputwiredinverters—including a plethora of solutions evolved from them—as well as many differential solutions), and shortly mentions other implementations (e.g., based on negative resistance devices and on single electron technologies). Index Terms — Integrated circuits, neural network hardware, threshold logic, VLSI.
Resonant Tunneling Device Logic Circuits
, 1999
"... This report is a summary of the activities in the field of resonant tunneling device circuit design. The presented work has been performed by the Department of Microelectronics of the University of Dortmund (UNIDO) and the SolidState Electronics Department of the GerhardMercator University of Duis ..."
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This report is a summary of the activities in the field of resonant tunneling device circuit design. The presented work has been performed by the Department of Microelectronics of the University of Dortmund (UNIDO) and the SolidState Electronics Department of the GerhardMercator University of Duisburg (GMUD) during the first year of the Microelectronics Advanced Research Initiative projects ANSWERS (Autonomous Nanoelectronic Systems with Extended Replication and Signalling) and LOCOM (Logic Circuits with Reduced Complexity based on Devices with Higher Functionality). As part of the ANSWERS workpackage the principal task of UNIDO is to investigate novel logic circuit architectures for resonant tunneling devices, to perform circuit simulations, and to specify the electrical device parameters. The basic device configuration is a monolithically integrated resonant tunneling diode heterostructure fieldeffect transistor (RTDHFET). This device and the demonstrator circuits are fabricated by the LOCOM partner GMUD.
Network of Excellence in Nanoelectronics
"... Neither the European Commission nor any person acting on behalf of the Commission is responsible for the use which might be made of the following information Cover photo Atomic Force Microscopy (AFM) image of a modified silicon surface. The text was written by locally oxidising the silicon surface w ..."
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Neither the European Commission nor any person acting on behalf of the Commission is responsible for the use which might be made of the following information Cover photo Atomic Force Microscopy (AFM) image of a modified silicon surface. The text was written by locally oxidising the silicon surface with an AFM tip. Each letter is 80 mm in size consisting of a series of individual dots with a diameter of 20 mm. M. Calleja, F. Garcia and R. Garcia (CSIC CNN Madrid) Additional information: This document is regularly updated. The next issue is expected to appear end
Building multiinput RTD circuits under reliability constraints
"... Threshold functions can be implemented in nanotechnology using the MOBILE architecture based on resonant tunneling diodes (RTDs). The operational reliability of the architecture is greatly dependent upon the number of RTDs used, due to the variance of the accumulated peak currents. This constrain ..."
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Threshold functions can be implemented in nanotechnology using the MOBILE architecture based on resonant tunneling diodes (RTDs). The operational reliability of the architecture is greatly dependent upon the number of RTDs used, due to the variance of the accumulated peak currents. This constrains the number of inputs to the threshold circuit. The number of inputs is also a measure of the area and interconnect complexity. This paper shows that a threshold function with n inputs can be implemented as a network of smaller threshold functions. Our implementation uses linear chains of identical threshold functions and is therefore easier to fabricate and can be easily pipelined for high throughput. The total input complexity of all the functions involved in our implementation is O(nR2), where R is the difference between the sum of all the positive weights and the threshold. This compares very favorably with the traditional decompositions of threshold functions which have a total input complexity of O(2n). 1