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Results 1 - 10
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175
Dynamics of free and bound excitons in GaN nanowires: Origin of the nonradiative
"... eingereicht an der ..."
Effects of Source Access Resistance on Gate lag in AlGaN/GaN HEMTs and Current Slump Behavior
"... Recently, AlGaN/GaN HEMTs have received great attention because of their potential applications to high power microwave devices [1]. However, slow current transients are often observed even if the drain voltage VD or gate voltage VG is changed abruptly (called drain lag or gate lag) [2]. The slow tr ..."
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theoretical works are made recently[5,7], where effects of a donor-type surface state (near the valence band) or effects of a bulk deep acceptor ( ∼ 1 eV above the midgap of GaN) are studied for gate lag or pulsed I-V curves in AlGaN/GaN HEMTs. But, the type of traps and their energy levels seemed
Physics, Compact Modeling and TCAD of SiGe HBT for Wide Temperature Range Operation
, 2011
"... One of the remarkable characteristics of SiGe HBT is the ability to operate over a wide tem-perature range, from as low as sub 1K, to as high as over 400 K. The SiGe HBT investigated and measured in this work is a first-generation, 0.5 mm SiGe HBT with fT = fmax of 50 GHz/65 GHz and BVCEO=BVCBO of 3 ..."
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to 393K. Device TCAD simulations are used to help understand the device physics at cryogenic temperatures. First, the temperature dependence of semiconductors critical metrics are reviewed, including bandgap energy Eg, effective conduction band density-of-states NC and valence band density-of-states NV
Connecting TCAD To Tapeout A Journal for Process and Device Engineers INSIDE 3D Simulation of Nanowire FETs using Quantum Models.................................................... 6 Simulation and Experimental Results on the Forward J–V Characteristic of
"... Abstract—High frequency characterizations and simulations of 3D damascene Metal-Insulator-Metal (MIM) capacitors are presented. We focused on the impact of the design on the performance of integrated capacitors. Results showed that properties of MIM capacitor get improved with specifi c design recom ..."
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Abstract—High frequency characterizations and simulations of 3D damascene Metal-Insulator-Metal (MIM) capacitors are presented. We focused on the impact of the design on the performance of integrated capacitors. Results showed that properties of MIM capacitor get improved with specifi c design
THERMAL STUDY OF A GaN-BASED HEMT
, 2012
"... by Jorge A. Ferrer Pérez Semiconductors have undergone a continual miniaturization process, and heat dissipation has become one of its most challenging problems with respect to applications. Heat is generated when electrons within the device transfer energy to phonons through scattering by the latti ..."
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by the lattice. Since scattering inside the device is not uniform, this process can generate localized hot spots. This work presents experimental and numerical approaches to the understanding of the thermal behavior of gallium-nitride (GaN) high-electron-mobility transistors (HEMTs) under bias conditions
Transient Device Simulation of Floating Gate Nonvolatile Memory Cell With a Local Trap Hiroshi Watanabe
"... Abstract—The single-electron general-purpose device simulator is improved to carry out a wide-range transient analysis from 1 ps to 10 years. We apply this simulator to a floating gate (FG) nonvolatile memory cell in order to simulate a degradation mode of data retention owing to the direct tunnelin ..."
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tunneling enhanced by the fixed charge stored by a local trap in an interpoly dielectric. The scaling impact of ideal high-K interpoly dielectric FG nonvolatile memory cell is also investigated. Index Terms—Coulomb oscillation, device modeling, device simulation, floating gate (FG), local trap, memory
ABSTRACT JIN, YAWEI. Simulation Methodology to Compare Emerging Technologies for Alternatives to Silicon Gigascale Logic Device. (Under the direction of Dr. D. W. Barlage).
"... Practical realization of low-power, high-speed transistor technologies for future generation nano-electronics can be achieved with novel structures, such as FinFET, tri-gate or with the integration of exotic channel materials, such as Gallium Nitride (GaN), into Fully-Depleted SOI (FDSOI) transistor ..."
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. The III-V semiconductors, such as Gallium Nitride (GaN), have high maximum electron drift velocities and ballistic mean free paths, which would enable high-speed tran-sistor operation at very low voltages with gate lengths below 10nm. Since it’s impractical for experiments currently, TCAD simulation can
PIEZOELECTRIC EFFECT
, 2001
"... Gallium Nitride (GaN) High Electron Mobility Transistors (HEMTs) are microwave power devices that promise to revolutionize the capability of Navy radar systems. The Office of Naval Research is currently funding basic research of developing microwave power amplifiers for use in future radar systems. ..."
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. This thesis incorporates piezoelectric (PZ) equations in the Silvaco Atlas TM software for modeling GaN/AlGaN structures. The PZ effect enhances a two dimensional electron gas at the GaN/AlGaN interface due to stress induced polarization. DoD KEY TECHNOLOGY AREAS:
Thin-Film Transistor
, 2015
"... The objective of the research presented herein is to elucidate the effect of traps in determining amorphous oxide semiconductor thin-film transistor (AOS TFT) performance using modeling and characterization. A novel method is proposed to extract the interface state distribution from a TFT transfer c ..."
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surface potential of ~0.3 V. Technology computer-aided design (TCAD) simulation is employed in order to assess IGZO TFT non-ideal electrical characteristics involving different types of charge and/or traps. TCAD simulation reveals that negative charge placed at the backside (ungated) surface or frontside
Results 1 - 10
of
175
