The deposition rate of Si03 by liquid-phase deposition (LPD) in a H2SiF6 solution is significantly increased by 254 nm ultraviolet (UV) illumination. The photoenhancement effect is much stronger at 3.09 M H2SiF6 than at 1.34 M H9SiF6 concentration. At a constant boric acid concentration the deposition rate of Si03 is found to increase linearly with UV light intensity. The photoassisted effect is much stronger at higher boric acid concentration. However, within the TJV intensity range studied, the photoeffect on the oxide growth rate is not as strong as other parameters such as H3SiF6 con-centration and boric acid addition. The UV spectrophotometric results show that the strong UV absorption of the growth solution is associated with SiFt but not with H30, H3B03, or BF species in the solution. The observed photoenhance-ment effect is discussed in the light of the existing LPD models. The growth of Si03 films by liquid-phase deposition has received increased attention recently because of its advan-tages of low temperature processing, reduced capital cost, high throughput, and excellent selectivity over the tradi-tional techniques such as chemical vapor deposition (CVD), radio frequency (RF) reactive sputtering, E-gun

The deposition rate of Si03 by liquid-phase deposition (LPD) in a H2SiF6 solution is significantly increased by 254 nm ultraviolet (UV) illumination. The photoenhancement effect is much stronger at 3.09 M H2SiF6 than at 1.34 M H9SiF6 concentration. At a constant boric acid concentration the deposition rate of Si03 is found to increase linearly with UV light intensity. The photoassisted effect is much stronger at higher boric acid concentration. However, within the TJV intensity range studied, the photoeffect on the oxide growth rate is not as strong as other parameters such as H3SiF6 con-centration and boric acid addition. The UV spectrophotometric results show that the strong UV absorption of the growth solution is associated with SiFt but not with H30, H3B03, or BF species in the solution. The observed photoenhance-ment effect is discussed in the light of the existing LPD models. The growth of Si03 films by liquid-phase deposition has received increased attention recently because of its advan-tages of low temperature processing, reduced capital cost, high throughput, and excellent selectivity over the tradi-tional techniques such as chemical vapor deposition (CVD), radio frequency (RF) reactive sputtering, E-gun