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High Performance n-Type Carbon Nanotube Field-Effect Transistors with Chemically Doped Contacts NANO LETTERS
, 2004
"... Short channel (∼80 nm) n-type single-walled carbon nanotube (SWNT) field-effect transistors (FETs) with potassium (K) doped source and drain regions and high-K gate dielectrics (ALD HfO2) are obtained. For nanotubes with diameter ∼1.6 nm and band gap ∼0.55 eV, we obtain n-MOSFET-like devices exhibit ..."
Abstract
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Cited by 15 (3 self)
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Short channel (∼80 nm) n-type single-walled carbon nanotube (SWNT) field-effect transistors (FETs) with potassium (K) doped source and drain regions and high-K gate dielectrics (ALD HfO2) are obtained. For nanotubes with diameter ∼1.6 nm and band gap ∼0.55 eV, we obtain n-MOSFET-like devices
