Results 1 - 10 of 56,542

Foundation of rf CMOS and SiGe BiCMOS Technologies

by J. S. Dunn, D. C. Ahlgren, D. D. Coolbaugh, N. B. Feilchenfeld, G. Freeman D. R. Greenberg, R. A. Groves, F. J. Guarn, Y. Hammad, A. J. Joseph, L. D. Lanzerotti, S. A. St.Onge, B. A. Orner, J.-S. Rieh, K., Sige Bicmos , 2003
"... This paper provides a detailed description of the IBM SiGe BiCMOS and rf CMOS technologies. The technologies provide high-performance SiGe heterojunction bipolar transistors (HBTs) combined with advanced CMOS technology and a variety of passive devices critical for realizing an integrated mixed-sign ..."
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This paper provides a detailed description of the IBM SiGe BiCMOS and rf CMOS technologies. The technologies provide high-performance SiGe heterojunction bipolar transistors (HBTs) combined with advanced CMOS technology and a variety of passive devices critical for realizing an integrated mixed

A Low-Power 26-GHz Transformer-Based Regulated Cascode SiGe BiCMOS Transimpedance Amplifier

by Cheng Li, Samuel Palermo - IEEE Journal of Solid-State Circuits , 2013
"... Abstract — A 26 GHz transimpedance amplifier (TIA) with transformer-based regulated cascode (RGC) input stage is proposed and analyzed. The transformer enhances the effective transconductance of the TIA’s input common-base transistor; reducing the input resistance and providing considerable bandwid ..."
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bandwidth extension. The TIA is implemented in a 0.25µm BiCMOS technology. Measurement shows the single-ended transimpedance gain of 53dBΩ with-3dB bandwidth of 26 GHz. Total chip power, including an output buffer, is 28.2mW from a 2.5V supply; while core TIA power is 8.2mW. The measured average input

SiGe BiCMOS technology for communication products

by Marco Racanelli, Paul Kempf - in Proc. IEEE Custom Integr. Circuits Conf., 2003
"... SiGe BiCMOS technology is reviewed with focus on recent advances including the achievement of>200 GHz Ft and Fmax SiGe transistors, integration with generic 0.13 µm CMOS, and the realization of low-cost nodes for the integration of wireless transceivers. Record-breaking wireless and wire-line cir ..."
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SiGe BiCMOS technology is reviewed with focus on recent advances including the achievement of>200 GHz Ft and Fmax SiGe transistors, integration with generic 0.13 µm CMOS, and the realization of low-cost nodes for the integration of wireless transceivers. Record-breaking wireless and wire

A 2.5-V, 45-Gb/s decision circuit using SiGe BiCMOS logic

by Timothy O. Dickson, Student Member, Rudy Beerkens, Sorin P. Voinigescu, Senior Member - IEEE J. Solid-State Circuits , 2005
"... Abstract—A 45-Gb/s BiCMOS decision circuit operating from a 2.5-V supply is reported. The full-rate retiming flip-flop oper-ates from the lowest supply voltage of any silicon-based flip-flop demonstrated to date at this speed. MOS and SiGe heterojunc-tion-bipolar-transistor (HBT) current-mode logic ..."
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Abstract—A 45-Gb/s BiCMOS decision circuit operating from a 2.5-V supply is reported. The full-rate retiming flip-flop oper-ates from the lowest supply voltage of any silicon-based flip-flop demonstrated to date at this speed. MOS and SiGe heterojunc-tion-bipolar-transistor (HBT) current-mode logic

0.13 m SiGe BiCMOS Technology Fully Dedicated to mm-Wave Applications

by Grégory Avenier, Malick Diop, Pascal Chevalier, Germaine Troillard, Nicolas Loubet, Julien Bouvier, Linda Depoyan, Nicolas Derrier, Michel Buczko, Cédric Leyris, Samuel Boret, Sébastien Montusclat, Alain Margain, Sébastien Pruvost, Sean T. Nicolson, Student Member, Kenneth H. K. Yau, Student Member, Nathalie Revil, Daniel Gloria, Didier Dutartre, Sorin P. Voinigescu, Senior Member, Alain Chantre, Senior Member
"... Abstract—This paper presents a complete 0.13 m SiGe BiCMOS technology fully dedicated to millimeter-wave appli-cations, including a high-speed (230/280 GHz ..."
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Abstract—This paper presents a complete 0.13 m SiGe BiCMOS technology fully dedicated to millimeter-wave appli-cations, including a high-speed (230/280 GHz

A Single-Chip Electron Paramagnetic Resonance Transceiver in 0.13- m SiGe BiCMOS

by Xuebei Yang, Student Member, Aydin Babakhani
"... Abstract—We report the first absorption-based single-chip transceiver for electron paramagnetic resonance (EPR) spec-troscopy in silicon. The chip is implemented in a 0.13- m SiGe BiCMOS process technology. The transmitter generates and delivers a continuous-wave microwave signal with a fre-quency r ..."
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Abstract—We report the first absorption-based single-chip transceiver for electron paramagnetic resonance (EPR) spec-troscopy in silicon. The chip is implemented in a 0.13- m SiGe BiCMOS process technology. The transmitter generates and delivers a continuous-wave microwave signal with a fre

A Q-Band Frequency Synthesizer in 0.13µm SiGe BiCMOS

by Jiankang Li, Yong-zhong Xiong, Jin He, Wen Wu
"... Abstract—In this paper, a 42GHz frequency synthesizer fabricated with 0.13µm SiGe BiCMOS technology is presented, which consists of an integer-N fourth-order type-II phase locked loop (PLL) with a LC tank VCO and a frequency doubler. The core PLL has three-stage current mode logic (CML) and five sta ..."
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Abstract—In this paper, a 42GHz frequency synthesizer fabricated with 0.13µm SiGe BiCMOS technology is presented, which consists of an integer-N fourth-order type-II phase locked loop (PLL) with a LC tank VCO and a frequency doubler. The core PLL has three-stage current mode logic (CML) and five

An 80-Gb/s 2 31 − 1 pseudorandom binary sequence generator in SiGe BiCMOS technology

by Timothy O. Dickson, Student Member, Ekaterina Laskin, Student Member, Imran Khalid, Rudy Beerkens, Jingqiong Xie, Boris Karajica, Sorin P. Voinigescu, Senior Member - IEEE J. Solid-State Circuits , 2005
"... Abstract—A 231 1 pseudorandom binary sequence (PRBS) generator with adjustable output data rates up to 80 Gb/s is re-ported in a production 130-nm BiCMOS process with 150-GHz SiGe heterojunction bipolar transistor (HBT). The pseudorandom sequence is generated at 20 Gb/s using a linear feedback shift ..."
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paths to improve timing margins throughout the system. The PRBS generator consumes 9.8 W from a 3.3-V supply and can deliver an output voltage swing of up to 430 mV single-ended at 80 Gb/s. Index Terms—BiCMOS, clock distribution, current-mode logic, PRBS, SiGe HBT. I.

SiGe BiCMOS integrated circuits for high-speed serial communication links

by D. J. Friedman, M. Meghelli, B. D. Parker, J. Yang, H. A. Ainspan, A. V. Rylyakov, Y. H. Kwark, M. B. Ritter, L. Shan, S. J. Zier, M. Sorna, M. Soyuer, Sige Bicmos , 2003
"... This paper reviews the key requirements for implementing such functions in monolithic form and describes their implementation in the IBM SiGe BiCMOS technology. Aspects focused on are the integration of 10--13-Gb/s serializer/deserializer chips with subpicosecond jitter performance, the realization ..."
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This paper reviews the key requirements for implementing such functions in monolithic form and describes their implementation in the IBM SiGe BiCMOS technology. Aspects focused on are the integration of 10--13-Gb/s serializer/deserializer chips with subpicosecond jitter performance, the realization

A SiGe BiCMOS Burst-Mode 155 Mb/s Receiver for PON

by S. Brigati, P. Colombara, U. Gatti, T. Kerekes
"... In this paper we present an integrated 155 Mb/s burstmode receiver (BMR) for passive optical network (PON) applications. The chip receives optical signals over a wide dynamic range (–27 dBm to 1 dBm) and temperature range (–40 ° C to +85 ° C). The chip was implemented using a sub-micron SiGe BiCMOS ..."
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In this paper we present an integrated 155 Mb/s burstmode receiver (BMR) for passive optical network (PON) applications. The chip receives optical signals over a wide dynamic range (–27 dBm to 1 dBm) and temperature range (–40 ° C to +85 ° C). The chip was implemented using a sub-micron SiGe BiCMOS
Results 1 - 10 of 56,542