Investigation on technological aspects of class E RF Power Amplifiers for UMTS Applications (2002)
BibTeX
@MISC{Milosevic02investigationon,
author = {Dusan Milosevic and Johan Van Der Tang and Arthur van Roermun},
title = {Investigation on technological aspects of class E RF Power Amplifiers for UMTS Applications},
year = {2002}
}
Bookmark
 |
 |
 |
 |
 |
 |
OpenURL
Abstract
This paper presents results of investigation on the effects of technology on the performance of the class E power amplifier circuit. A typical class E circuit has been designed and simulated, for a typical UMTS Tx frequency (1.95 GHz) and output power (≈27dBm). Three different technologies have been used (silicon BJT, CMOS and GaAs HBT) and several important parameters (output efficiency, power added efficiency, stress put on the device) have been monitored and put in table form for comparison. Care has been taken to adapt the design in such a way to provide a maximum performance with each technology, for a fair comparison. The results are then analyzed and different tradeoffs are discussed. Possibilities for the linearization of the amplifier are considered.
