High Current Density in c-Si PECVD Diodes for Low Temperature (2004)
BibTeX
@MISC{Access04highcurrent,
author = {Applications Information Access and Patricia A. Beck and Patricia A. Beck and Janice H. Nickel and Janice H. Nickel and Peter G. Hartwell and Peter G. Hartwell},
title = {High Current Density in c-Si PECVD Diodes for Low Temperature},
year = {2004}
}
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Abstract
The development of microcrystalline diodes grown at low temperature by PECVD techniques is reported. Current densities near 200 A/cm at + 2 V, and rectification ratios on the order of 10 at +/- 2V were obtained. The reverse currents were in the nanoampere range. Correlations between deposition cond itions and film quality are presented. The effects of mesa formation and subsequent treatments designed to reduce process damage are discussed: annealing conditions yield an increase in forward current, and a decrease in reverse current. Fabrication cond itions are compatible with applications requiring low temperature processes (e. g., multi- layer structures, molecular layers, or plastic substrates and coatings).
Citations
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| 7 | Hydrogenated amorphous silicon - Street - 1991 |
| 1 | Kuekes et al - J |
| 1 | Solar Program Review Mtg - Wronski |
| 1 | Iowa Thin Films, private communication - Jeffrey |
| 1 | Transistor Engineering and Introduction to Integrated Semiconductor Circuits - Phillips - 1962 |
