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A read-static-noise-margin-free SRAM cell for lowVDD and high-speed applications (2006)

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by Koichi Takeda , Yasuhiko Hagihara , Yoshiharu Aimoto , Masahiro Nomura , Yoetsu Nakazawa , Toshio Ishii , Hiroyuki Kobatake
Venue:IEEE Journal of Solid-State Circuits
Citations:18 - 0 self