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The future of atomic resolution electron microscopy for Materials Science (1999)
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BibTeX
@MISC{Spence99thefuture,
author = {J. C. H. Spence},
title = {The future of atomic resolution electron microscopy for Materials Science},
year = {1999}
}
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Abstract
The field of atomic-resolution transmission electron microscopy and its application to materials science is reviewed. This technique, whose spatial resolution is now about one Angstrom, is valuable wherever nanoscale characterization of materials is needed. The history of the subject is briefly outlined, followed by a discussion of experimental techniques. Resolution-limiting factors are summarized, together with the underlying theory of image formation. Seven promising approaches to super-resolution are reviewed. The statistical principles of quantitative image analysis and defect modelling are outlined for both HREM and STEM. Methods for obtaining defect energies from images are discussed. The review ends with a summary of some recent applications, including such topics as the Fullerenes, nanotubes, dislocation kink imaging, superconductors, atomic-resolution imaging of whole semiconductor devices, the study of atomic defects in mediating first-order phase transitions, collosal magnetoresistance, ceramic interfaces, quasicrystals, imaging of surfaces, glasses, catalysts and magnetic
Keyphrases
atomic resolution electron microscopy recent application experimental technique atomic defect ceramic interface dislocation kink imaging atomic-resolution imaging defect modelling image formation resolution-limiting factor whole semiconductor device first-order phase transition atomic-resolution transmission electron microscopy spatial resolution quantitative image analysis statistical principle nanoscale characterization collosal magnetoresistance defect energy material science
