A CMOS Area Image Sensor With Pixel Level A/D Conversion (1995)
| Venue: | IN ISSCC DIGEST OF TECHNICAL PAPERS |
| Citations: | 18 - 7 self |
BibTeX
@INPROCEEDINGS{Fowler95acmos,
author = {Boyd Fowler and Abbas El Gamal and David X. D. Yang},
title = {A CMOS Area Image Sensor With Pixel Level A/D Conversion},
booktitle = {IN ISSCC DIGEST OF TECHNICAL PAPERS},
year = {1995},
pages = {226--227},
publisher = {}
}
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Abstract
A CMOS 64 x 64 pixel area image sensor chip using Sigma-Delta modulation at each pixel for A/D conversion is described. The image data output is digital. The chip was fabricated using a 1.2µm two layer metal single layer poly n-well CMOS process. Each pixel block consists of a phototransistor and 22 MOS transistors. Test results demonstrate a dynamic range potentially greater than 93dB, a signal to noise ratio (SNR) of up to 61dB, and dissipation of less than 1mW with a 5V power supply.
