A High-Drive Low-Power BiCMOS Buffer Using Compound PMOSNPN Transistors
by
Paul M. Furth
,
Andreas G. Andreou
| Citations: | 1 - 0 self |
BibTeX
@MISC{Furth_ahigh-drive,
author = {Paul M. Furth and Andreas G. Andreou},
title = {A High-Drive Low-Power BiCMOS Buffer Using Compound PMOSNPN Transistors},
year = {}
}
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Abstract
In this paper we present a high-drivelowpower BiCMOS bu#er ampli#er implemented in a 2#m technology. The class-AB output stage incorporates stacked NPN and compound PMOS#NPN transistors in which the PMOS transistors operate below threshold. Quiescent currentis300#A using a #2:5V supply.Total area is 0:165mm 2 . I.
Citations
| 60 | and G.C.Temes, Analog MOS Integrated Circuits for Signal Processing - Gregorian - 1986 |
| 4 | An Analog Cochlear Model: Signal Representation and VLSI Realization - Liu - 1992 |
