A 1.5-V, 1.5-GHz CMOS low noise amplifier (1997)
| Venue: | IEEE J. Solid-State Circuits |
| Citations: | 87 - 10 self |
BibTeX
@ARTICLE{Shaeffer97a1.5-v,,
author = {Derek K. Shaeffer and Student Member and Thomas H. Lee},
title = {A 1.5-V, 1.5-GHz CMOS low noise amplifier},
journal = {IEEE J. Solid-State Circuits},
year = {1997},
pages = {745--759}
}
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Abstract
Abstract—A 1.5-GHz low noise amplifier (LNA), intended for use in a global positioning system (GPS) receiver, has been implemented in a standard 0.6- m CMOS process. The amplifier provides a forward gain (S21) of 22 dB with a noise figure of only 3.5 dB while drawing 30 mW from a 1.5 V supply. In this paper, we present a detailed analysis of the LNA architecture, including a discussion on the effects of induced gate noise in MOS devices. Index Terms — Amplifier noise, induced gate noise, low noise amplifier, microwave amplifier, MOSFET amplifier, noise figure, random noise, semiconductor device noise. I.
