CMOS Active Pixel Image Sensors for Highly Integrated Imaging Systems (1997)
| Venue: | IEEE Journal of Solid-State Circuits |
| Citations: | 28 - 1 self |
BibTeX
@ARTICLE{Mendis97cmosactive,
author = {Sunetra K. Mendis and Sabrina E. Kemeny and Russell C. Gee and Bedabrata Pain and Craig O. Staller and Quiesup Kim and Eric R. Fossum and Senior Member},
title = {CMOS Active Pixel Image Sensors for Highly Integrated Imaging Systems},
journal = {IEEE Journal of Solid-State Circuits},
year = {1997},
volume = {32},
pages = {187--197}
}
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Abstract
Abstract—A family of CMOS-based active pixel image sensors (APS’s) that are inherently compatible with the integration of onchip signal processing circuitry is reported. The image sensors were fabricated using commercially available 2-"m CMOS processes and both p-well and n-well implementations were explored. The arrays feature random access, 5-V operation and transistortransistor logic (TTL) compatible control signals. Methods of on-chip suppression of fixed pattern noise to less than 0.1% saturation are demonstrated. The baseline design achieved a pixel size of 40 "m2 40 "m with 26 % fill-factor. Array sizes of 28 2 28 elements and 128 2 128 elements have been fabricated and characterized. Typical output conversion gain is 3.7 "V/e 0 for the p-well devices and 6.5 "V/e 0 for the n-well devices. Input referred read noise of 28 e0 rms corresponding to a dynamic range of 76 dB was achieved. Characterization of various photogate pixel designs and a photodiode design is reported. Photoresponse variations for different pixel designs are discussed. Index Terms—Active pixel sensor, cameras, CMOS image sensor. I.
