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A Study of Multiple-Valued Magnetoresistive RAM (MRAM) Using Binary MTJ Devices (2004)

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@MISC{Kimura04astudy,
    author = {Hiromitsu Kimura and Kostas Pagiamtzis and Ali Sheikholeslami and Takahiro Hanyu},
    title = {A Study of Multiple-Valued Magnetoresistive RAM (MRAM) Using Binary MTJ Devices},
    year = {2004}
}

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Abstract:

This paper presents four-valued magnetoresistive RAM (MRAM) storage cells using one access transistor and two binary magnetic tunnel junction (MTJ) devices with the MTJ devices either in series or in parallel. We present a comparative study of the two cells in terms of their area and power benefits over the binary MRAM, all using the same conventional MRAM process.

Citations

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2	Proposal of four-valued MRAM based on MTJ/RTD structure – Uemura, Yamamoto - 2003
2	Magnetoresistive random access memory using magnetic tunnel junctions – Tehrani, Slaughter, et al. - 2003
1	et al., “Magnetoresistive random access memory using magnetic tunnel junctions – Tehrani, Slaughter, et al. - 2003
1	et al., “High-performance MRAM technology with an improved magnetic tunnel junction material – Motoyoshi, Moriyama, et al.
1	et al., “A low power 1Mbit MRAM based on IT1MTJ bit cell integrated with copper interconnects – Durlam, Naji, et al.
1	Proposal of four-valued MRAMbasedonMTJ/RTDstructure,”inIEEE – Uemura, Yamamoto
1	low power 1Mbit MRAM based on IT1MTJ bit cell integrated with copper interconnects – Durlam, Omair