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13
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CMOS op-amp sizing using a geometric programming formulation
– P Mandal, V Visvanathan
- 2001
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6
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Optimization of Phase-Locked Loop Circuits via Geometric Programming
– David M. Colleran, Clemenz Portmann, Arash Hassibi, Cesar Crusius, Sunderarajan S. Mohan, Stephen Boyd, Thomas H. Lee, Maria del Mar Hershenson
- 2003
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7
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Optimal allocation of local feedback in multistage amplifiers via geometric programming
– Joel L. Dawson, Stephen P. Boyd, Maria Del Mar Hershenson, Thomas H. Lee
- 2001
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26
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Simple accurate expressions for planar spiral inductances
– Sunderarajan S. Mohan, Maria Del Mar Hershenson, Stephen P. Boyd, Thomas H. Lee
- 1999
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2135
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Convex Optimization
– S Boyd, L Vandenberghe
- 2004
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2
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Scaling issues and Ge profile optimization in advanced UHV/CVD SiGe HBT’s
– D M Richey, J D Cressler, A J Joseph
- 1997
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4
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Two integral relations pertaining to electron transport through a bipolar transistor with a nonuniform energy gap in the base region
– H Kroemer
- 1985
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2
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Base transit time of shallow-base bipolar transistors considering velocity saturation at base-collector junction
– K Suzuki, N Nakayam
- 1992
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2
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Profile Design Considerations for Minimizing Base Transit Time in SiGe HBT's
– Vijay S. Patri, M. Jagadesh Kumar
- 1998
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4
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Digital Circuit Sizing via Geometric Programming
– S Boyd, S-J Kim, D Patil, M Horowitz
- 2005
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2
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Automated optimal design of switched-capacitor filters
– A Hassibi, M Hershenson
- 2002
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1
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SiGe Heterojunction Bipolar Transistors
– P Ashburn
- 2003
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1
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An analytical approach to the modeling of intrinsic base sheet resistance in SiGe HBT and optimal profile design considerations for its minimization
– A Biswas, P Basu
- 2002
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1
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Si/SiGe epitaxial-base transistors
– D Harame, J H Comfort, J D Cressler, E F Crabbe, J Y-C Sun, B S Meyerson, T Tice
- 1995
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1
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Ge-profile design for high-speed SiGe HBTs: Modeling and analysis
– “Novel
- 1999
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1
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the iterative schemes to obtain base doping profiles for reducing base transit time in bipolar junction transistor
– “On
- 2001
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1
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A closed-form analytic forward transit time model considering specific models for bandgap-narrowing effects and concentration-dependent diffusion coefficients for BJT devices operating at 77K
– T-C Lu, J B Kuo
- 1993
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1
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Minimization of the base transit time in semiconductor devices using optimal control
– P Rinaldi, H Schättler
- 2002
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1
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optimal control problem with state space constraints arising in the design of bipolar transistors
– “An
- 2004
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