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## Modeling and Realization of an Ultra-Short Channel

### Citations

1224 |
Physics of Semiconductor Devices
- Sze
- 1981
(Show Context)
Citation Context ...dependent mobility of the n ++ andthe conductance which are related by σ = enµ, ∝ µ for constant n. The values for the carrier density and conductance are in agreement with values found in literature =-=[73]-=-. Furthermore, the temperature dependent source-source and drain-drain resistance is measured. This is necessary because the low temperature measurements couldonly be done in two-terminal configuratio... |

103 |
Operation and Modeling of the
- Tsividis
- 1999
(Show Context)
Citation Context ...re the potential profile is known. A practical way of extracting the DIBL is foundby the observation that the barrier lowering essentially leads to a shift of the transfer characteristics to lower Vg =-=[79]-=-. A horizontal line is drawn in the transfer characteristics which crosses the curve for a medium Vds at Vg ≈ 0. The gate voltage interval where the horizontal line crosses transfer curves for higher ... |

34 |
Short-channel effects in fully depleted SO1 MOSFET’s
- Young
- 1989
(Show Context)
Citation Context ...on of translational invariance along y is justified. As is shown in figure 4.1, x is directed along the channel length and z along the vertical direction, i.e. the SOI film thickness. Following Young =-=[90, 89]-=-, the original two-dimensional potential distribution is reduced to an essentially one-dimensional one as stated in the next section. 4.1.1 Poisson’s Equation The potential distribution in the MOSFET ... |

29 |
Self-consistent results for n-type Si inversion layers
- Stern
- 1972
(Show Context)
Citation Context ...tization in the z-direction is energetically well separatedfrom the conduction bandedge given by Φf , thereby enhancing the effective potential barrier height. Furthermore, the electric quantum limit =-=[68]-=- is considered here where due to the quantization only the lowest 2D subband is occupiedwhich is justifiedfor small tsi. This subbandhas the heavy effective electron mass mh directed along the z-coord... |

10 |
A.: Self-consistent 2-D model for quantum effects in n-MOS transistors
- See, Spinelli, et al.
- 1998
(Show Context)
Citation Context ... Green’s function formalism enables among other things the correct treatment of open boundaries for a finite computational domain which otherwise is often terminated by artificial boundary conditions =-=[67, 71]-=-. 4.1 The Model The device concept introduced in the previous chapter is a single-gated, fullydepleted MOSFET on SOI. Therefore, the model under investigation is chosen accordingly. In order to simpli... |

9 |
Computational Physics: An Introduction
- Vesely
(Show Context)
Citation Context ...n the channel. Notice that the last fraction in equation (A.23) is just the derivative of the Fermi-integral. Equation (A.21) yields a tridiagonal matrix which is solvedwith a standardrecursion method=-=[82]-=-. Neumann boundary conditions are used. Thus, the applied voltage Vds fixes the energetic difference of the Fermi-levels in source anddrain; the potential takes on whatever value is needed to ensure o... |

8 |
MOSFET channel length: extraction and interpretation
- Taur
(Show Context)
Citation Context ...Ts the ‘shift andratio’ methodintroducedby Taur et al. is the most effective. This methodcompares the linear regime of the output characteristics of a long- anda short-channel device with equal width =-=[74]-=-. When devices get shorter and shorter it becomes increasingly difficult to exactly define the metallurgical channel length. As long as there is no abrupt doping profile the actual source-drain separa... |

5 |
SCEs in fully depleted SOI MOSFETs
- Young
- 1989
(Show Context)
Citation Context ...on of translational invariance along y is justified. As is shown in figure 4.1, x is directed along the channel length and z along the vertical direction, i.e. the SOI film thickness. Following Young =-=[90, 89]-=-, the original two-dimensional potential distribution is reduced to an essentially one-dimensional one as stated in the next section. 4.1.1 Poisson’s Equation The potential distribution in the MOSFET ... |

2 |
A Generalized Model Describing Corner Undercutting by the Experimental Analysis
- Mokwa
(Show Context)
Citation Context ...ong been known that silicon can be etchedanisotropically with an ae[100]-direction quous KOH solution [65, 22]. Although there exist other possible etch solutions [110]-direction (such as EDP or TMAH =-=[45, 10, 78]-=-), here, we will restrict the considerations to KOH because it is non-toxic andeasy to handle. Therefore, it is used for all anisotropic etch steps. {111}-planes The most striking feature of KOH is th... |

1 |
Simulation of the Drain-Current Characteristics of MOSFETs with Ultrathin Oxides
- Massoud
- 1999
(Show Context)
Citation Context ... the channel due to vertical quantization [56] is considered or merely a 1D model perpendicular to the current flow is employed in order to describe the tunneling current from the gate to the channel =-=[66, 30, 43]-=-. Other works compute the 2D electron and current distributions relying on quasi-classical methods but neglect tunneling through the gate [50] or abandon self-consistency between the quantum and Poiss... |

1 |
Profiles and Low-Temperature Diffusion of Ga and Sb in Silicon Modulation-Doped Superlattices
- Allen
- 1987
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Citation Context ...vel accessible only with SPE [70] and the low process temperatures not exceeding 600◦ C which prevents the Sb dopants from diffusing. Hence, abrupt doping profiles can be realized with this technique =-=[69]-=-. The thickness of the n ++ layer is intendedto be around100 nm in order to get mask openings in the range of 140 nm, easily accessible with electron beam lithography. A transmission electron microsco... |

1 |
Doping of silicon in Molecular Beam Epitaxy Systems by Solid Phase Epitaxy
- Allen
- 1984
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Citation Context ...h HF. The deposited amorphous silicon film recrystallizes when annealed at a temperature of 600◦ C. The advantages over usual molecular beam epitaxy are the high doping level accessible only with SPE =-=[70]-=- and the low process temperatures not exceeding 600◦ C which prevents the Sb dopants from diffusing. Hence, abrupt doping profiles can be realized with this technique [69]. The thickness of the n ++ l... |

1 |
Ning, Fundamentals of modern VLSI Devices
- andT
- 1998
(Show Context)
Citation Context ... band edges is not drawn to scale. In non-degenerately p-doped silicon the Fermi level Ef deep in the semiconductor side is determined by the doping concentration Na andthe temperature T according to =-=[76]-=- ( ) Na Ei − Ef = kT ln (2.1) where ni is the intrinsic carrier concentration and Ei can be considered as being the midpoint between valence and conduction band edge. The difference between the Fermi ... |

1 |
Three Mechanisms Determining Short-Channel Effects in Fully-Depleted SOI MOSFET’s
- Tomizawa
- 1998
(Show Context)
Citation Context ...roll-off is a severe problem in short-channel devices because manufacturing tolerances in the channel dimensions leads to significantly differing Vth from device to device2.3 SHORT-CHANNEL MOSFET 15 =-=[80]-=-. In addition, Vth must not be too small in order to get a defined off-state at Vg = 0 V. In order to overcome this problem the influence of source and drain depletion zones have to be diminished whic... |

1 |
Short-Channel Effects in SOI MOSFET’s
- Fsooum
- 1989
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Citation Context ... thick films (≥ 300 nm) the devices are very much like bulk MOSFETs. Reducing tsi results in a thin film device with superior output characteristics and short-channel behavior for scaled-down devices =-=[15, 81]-=-. In particular, the fully-depleted (FD) SOI MOSFET is the most promising version of possible SOI devices. Fully-depleted means that tsi is smaller than the depletion length at threshold. When scaling... |

1 |
Device Design Considerations for Double-Gate, Ground-Plane, and Single-Gated Ultra-Thin SOI MOSFET’s at the 25 nm
- Solomon
- 1998
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Citation Context ... a consensus about the optimal design of an ultra-short channel device [75, 85] which is the double-gated MOSFET on SOI. Many theoretical studies have revealed its superior electrical characteristics =-=[84, 50]-=-.2.4 THE IDEAL TRANSISTOR STRUCTURE 19 The two gates effectively terminate the drain electric field lines which results in an efficient suppression of short-channel effects [75]. There is an abrupt d... |

1 |
Discrete Random Dopant Distribution Effects
- Frank
- 1998
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Citation Context ...the nanometer regime. Even for the highest doping levels there are only a few dopants in the channel which lead to fluctuating electrical behavior from device to device disabling digital applications =-=[87]-=-. Hence, for ultimately scaled devices doping of the channel cannot be tolerated. A special device layout must be employed in this case in order to prevent the SCE from making the device inoperative. ... |

1 |
Scaling the Si MOSFET: From Bulk to SOI to Bulk
- Lee
- 1710
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Citation Context ...∂2 + ∂x2 ∂z2 ) Φ(x, z) = ρ(x, z) . (4.1) In order to reduce the simulation problem to a one-dimensional calculation the so-calledparabolic approximation for the potential distribution Φ(x, z) is made =-=[88, 89, 90]-=- Φ(x, z) ≈ c0(x)+c1(x)z + c2(x)z 2 (4.2) Equation (4.2) needs three boundary conditions in the vertical direction to be fulfilledin order to specify the ‘constants’ ci(i =0..2) although there exist fo... |

1 |
Nanometer Patterning of Epitaxial CoSi2/Si(100) for Ultrashort Channel Schottky Barrier Metal-Oxide-Semiconductor Field Effect Transistors
- Mantl
- 1999
(Show Context)
Citation Context ...icated in (a) for all diagrams.6.2 LOW-TEMPERATURES 79 of an exponential increase in Id for low bias. An exponential increase in Id for small bias is typical of two reversibly biased Schottky diodes =-=[91]-=-. Hence, this is a clear signature for the existence of potential barriers at source anddrain. These barriers are such that they do not play a significant role at higher temperatures since the exponen... |