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...ersion or atypically within the region of weak inversion called sub-threshold region. That second operating region is utilised in electronic circuits with very low supply voltage, even below one-volt =-=[5]-=-. 2. Properties of FGMOS transistor Floating-gate MOS transistor is generated by forming an additional conductive layer, between control terminal G and channel DS isolated from the environment, called...

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...dditional input control signals UGi and possibility of threshold voltage UTH reduction. The circuits containing MIFGMOS transistors can be, basing on relation’s (3) and (4) simulated using macromodel =-=[3, 6]-=- (Fig. 2) composed of MOS transistor as well as additional capacities of gates CGi and controlled sources wiUi. Fig. 2. Equivalent macromodel of k-input FGMOSFET 3. Simple voltage amplifiers with MIFG...

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...mple voltage amplifiers with MIFGMOS transistor Using MIFGMOS transistor with large number of input terminals Giin above-mentioned amplifier, simple summing voltage amplifier as in Fig. 3 is obtained =-=[4, 7]-=-. Fig. 3. Reversing/summing voltage amplifier with one MIFGMOS transistor For operation within the saturation region that amplifier is described by the following dependence: U0 = 1 w0 √ 2I β − n∑ j=1 ...

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...dditional input control signals UGi and possibility of threshold voltage UTH reduction. The circuits containing MIFGMOS transistors can be, basing on relation’s (3) and (4) simulated using macromodel =-=[3, 6]-=- (Fig. 2) composed of MOS transistor as well as additional capacities of gates CGi and controlled sources wiUi. Fig. 2. Equivalent macromodel of k-input FGMOSFET 3. Simple voltage amplifiers with MIFG...

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...mple voltage amplifiers with MIFGMOS transistor Using MIFGMOS transistor with large number of input terminals Giin above-mentioned amplifier, simple summing voltage amplifier as in Fig. 3 is obtained =-=[4, 7]-=-. Fig. 3. Reversing/summing voltage amplifier with one MIFGMOS transistor For operation within the saturation region that amplifier is described by the following dependence: U0 = 1 w0 √ 2I β − n∑ j=1 ...

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...stors from Fig. 3 working in non-saturation Bull. Pol. Ac.: Tech. 52(3) 2004 253 L. Topór-Kamiński, P. Holajn region in the way presented in Fig. 8, then multiple-input voltage amplifier is obtained. =-=[8]-=- Fig. 8. Multiple-input OA with a pair of FGMOS transistors working in non-saturation region For the same weight value of all input terminals it is described by the dependence: U0 = wβERm ( n∑ k=1 Uak...