Self-aligned SiGe NPN transistors with 285 GHz fMAX and 207 GHz fT in a manufacturable technology,” Electron Device (2002)

by B Jagannathan, M Khater, F Pagette, J-S Rieh, D Angell, H Chen, J Florkey, F Golan, D Greenberg, R Groves, S Jeng, J Johnson, E Mengistu, K Schonenberg, C Schnabel, P Smith, A Stricker, D Ahlgren, G Freeman, K Stein, S Subbanna
Venue:Letters, IEEE