Self-aligned SiGe NPN transistors with 285 GHz fmax and 207 GHz fT in a manufacturable technology (2002)

by B Jagannathan, M Khater, F Pagette, J-S Rieh, D Angell, H Chen, J Florkey, F Golan, D R Greenberg, R Groves, S J Jeng, J Johnson, E Mengistu, K T Schonenberg, C M Schnabel, P Smith, A Stricker, D Ahlgren, G Freeman, K Stein, S Subbanna
Venue:IEEE Electron Device Lett
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Design Automation Methodology and rf/Analog Modelimg for rf CMOS and . . .

by D. L. Harame, K. M. Newton, R. Singh, S. L. Sweeney, S. E. Strang, J. B. Johnson, S. M. Parker, C. E. Dickey, M. Erturk G. J. Schulberg, D. L. Jordan, D. C. Sheridan, M. P. Keene, J. Boquet, R. A. Groves
"... This paper describes each of these aspects and provides an overview of associated development work. 1. ..."
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This paper describes each of these aspects and provides an overview of associated development work. 1.

Design of High-Speed SiGe HBT BiCMOS Circuits for Extreme Environment Applications

by Ramkumar Krithivasan , 2007
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