Half-TeraHertz Operation of SiGe HBTs (2006)

by R Krithivasan, Y Lu, J D Cressler, J-S Rieh, M H Khater, D Ahlgren, G Freeman
Venue:IEEE Electron Device Letters
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ANALYSIS AND DESIGN OF LOW-NOISE AMPLIFIERS IN SILICON-GERMANIUM HETROJUNCTION BIPOLAR TECHNOLOGY FOR RADAR AND COMMUNICATION SYSTEMS Approved by:

by K. Thrivikraman, John D. Cressler Advisor , 2007
"... In memory of a great mentor, teacher, and friend: ..."
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In memory of a great mentor, teacher, and friend:

Design of High-Speed SiGe HBT BiCMOS Circuits for Extreme Environment Applications

by Ramkumar Krithivasan , 2007
"... ..."
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