Cryogenic Operation of Third-Generation 200-GHz Peak-fT, Silicon-Germanium Heterojunction Bipolar Transistors (2005)

by B Banerjee, S Venkataraman, Y Lu, Q Liang, C-H Lee, S Nuttinck, Y-J E Chen, D Heo, J D Cressler, J Laskar, G Freeman, D C Ahlgren
Venue:IEEE Trans. Electron Devices