Cryogenic operation of third-generation, 200-GHz peak-fT , silicon-germanium heterojunction bipolar transistors (2005)

by B Banerjee, S Venkataraman, Y Lu, Q Liang, C-H Lee, S Nuttinck, D Heo, Y-J E Chen, J D Cressler, J Laskar, G Freeman, D C Ahlgren
Venue:IEEE Trans. Electron Devices