Rapid growth in the portable communications market has pushed designers to seek low-cost, low-power, highly integrated solutions for the RF transceiver. A number of recent efforts have concentrated on integrating many of the discrete radio receiver components in a low-cost silicon process such as CMOS [1][2]. This paper describes a prototype of a monolithic CMOS receiver that combines RF and baseband functionality by taking the carrier signal at the LNA input and producing a 10-bit digital baseband waveform. A Wide-Band Intermediate Frequency Double Conversion (WBIFDC) architecture is utilized to remove the need for external narrow-band IF filters.

Abstract—This paper presents the basis of the modeling of the MOS transistor for circuit simulation at RF. A physical equivalent circuit that can easily be implemented as a Spice subcircuit is first derived. The subcircuit includes a substrate network that accounts for the signal coupling occurring at HF from the drain to the source and the bulk. It is shown that the latter mainly affects the output admittance PP. The bias and geometry dependence of the subcircuit components, leading to a scalable model, are then discussed with emphasis on the substrate resistances. Analytical expressions of the parameters are established and compared to measurements made on a 0.25- m CMOS process. The parameters and transit frequency simulated with this scalable model versus frequency, geometry, and bias are in good agreement with measured data. The nonquasi-static effects and their practical implementation in the Spice subcircuit are then briefly discussed. Finally, a new thermal noise model is introduced. The parameters used to characterize the noise at HF are then presented and the scalable model is favorably compared to measurements made on the same devices used for the-parameter measurement. Index Terms—Modeling, MOS devices, MOSFET’s, RF CMOS IC, semiconductor device modeling, semiconductor device noise,

Based on an active transmission line concept and twodimensional (2-D) device simulations, an accurate and computationally efficient simulation technique for high frequency noise performance of MOSFETs is demonstrated. Using a Langevin stochastic source term model and small-signal equivalent circuit of the MOSFET, three intrinsic noise parameters ( , , and )for the drain noise and induced gate noise are calculated. Validity and error analysis for the simulation are discussed by comparing the simulation results with theoretical results as well as measured data. Index Terms---MOSFETs, semiconductor device modeling, semiconductor device noise, simulation.

...................................................................................................................................... viii List of publications .......................................................................................................................ix Chapter 1: Introduction..................................................................................................................1 1.1 Scope and overall research contribution..............................................................................1 1.2 Motivation............................................................................................................................2 1.2.1 The interconnect problem .............................................................................................2 1.2.2 Capabilities and limitations of electrical interconnects................................................4 1.2.3 Advantages of optical interconnects ......................................

Short-channel CMOS technologies have shown growing prominence for a number of RF applications, such as wide-band wireless communication systems. However, the issue of excessive noise in submicron devices remains a major impediment to CMOS-based low-noise RF design. This paper expands very limited theoretical work existing in the #eld and presents new results in a form suitable for circuit design applications. We analyze the high-frequency noise behavior of a short-channel Metal-Oxide-Silicon Field-E#ect Transistor #MOSFET# in saturation within the scope of the drift-di#usion model. As a result of hot-electron e#ects in a signi#cant portion of a short channel, both drain current noise and channel-induced gate current noise turn out to be strong functions of the #eld distribution in the high-#eld region and therefore of biasing conditions. We present both #rst-principle and semi-phenomenological calculations of the noise factors and compare them with experimental results. Under the wor...

The physical origin of the excess thermal noise in short channel MOSFETs is explained based on numerical noise simulation. The impedance field representation and extraction method demonstrate that the drain current noise is dominated by source side contributions. Analysis identifies local ac channel resistance variations as the primary controlling factor. The nonlocal nature of velocity results in a smaller derivative of the velocity with respect to the field which in turn causes a higher local ac resistance near the source junction. Index Terms---Hydrodynamics, MOSFETs, semiconductor device modeling, semiconductor device noise, simulation. I.

A new theoretical approach for designing a low-noise amplifier (LNA) for the ultra-wideband (UWB) radio is presented. Unlike narrowband systems, the use of the noise figure (NF) performance metric becomes problematic in UWB systems because of the difficulty in defining the signal-to-noise ratio (SNR). By defining the SNR as the matched filter bound (MFB), the NF measures the degree of degradation caused by the LNA in the achievable receiver performance after the digital decoding process. The optimum matching network that minimizes the NF as defined above has been solved. Since realizing the optimum matching network is in general difficult, an approach for designing a practical but suboptimum matching network is also presented. The NF performance of both the optimum and the suboptimum matching networks is studied as a function of the LNA gain. 1

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