Abstract—A 1.5-GHz low noise amplifier (LNA), intended for use in a global positioning system (GPS) receiver, has been implemented in a standard 0.6- m CMOS process. The amplifier provides a forward gain (S21) of 22 dB with a noise figure of only 3.5 dB while drawing 30 mW from a 1.5 V supply. In this paper, we present a detailed analysis of the LNA architecture, including a discussion on the effects of induced gate noise in MOS devices. Index Terms — Amplifier noise, induced gate noise, low noise amplifier, microwave amplifier, MOSFET amplifier, noise figure, random noise, semiconductor device noise. I.

Abstract — Oversampling techniques based on sigma-delta (ΣΔ) modulation offer numerous advantages for the realization of high-resolution analog-to-digital (A/D) converters in a low-voltage environment. This paper examines the design and implementation of a CMOS ΣΔ modulator for digital-audio A/D conversion that operates from a single 1.8-V power supply. A cascaded modulator that maintains a large full-scale input range while avoiding signal clipping at internal nodes is introduced. The experimental modulator has been designed with fully-differential switched-capacitor integrators employing different input and output common-mode levels and boosted clock drivers in order to facilitate low voltage operation. Precise control of common-mode levels, high power supply noise rejection, and low power dissipation are obtained through the use of two-stage, class A/AB operational amplifiers. At a sampling rate of 4 MHz and an oversampling ratio of 80, an implementation of the modulator in a 0.8-μm CMOS technology with metal-to-polycide capacitors and NMOS and PMOS threshold voltages of +0.65-V and –0.75-V, respectively, achieves a dynamic range of 99 dB at a Nyquist conversion rate of 50 kHz. The modulator can operate from supply voltages ranging from 1.5 V to 2.5 V, occupies an active area of 1.5 mm 2, and dissipates 2.5 mW from a 1.8-V supply.

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Based on an active transmission line concept and twodimensional (2-D) device simulations, an accurate and computationally efficient simulation technique for high frequency noise performance of MOSFETs is demonstrated. Using a Langevin stochastic source term model and small-signal equivalent circuit of the MOSFET, three intrinsic noise parameters ( , , and )for the drain noise and induced gate noise are calculated. Validity and error analysis for the simulation are discussed by comparing the simulation results with theoretical results as well as measured data. Index Terms---MOSFETs, semiconductor device modeling, semiconductor device noise, simulation.

...................................................................................................................................... viii List of publications .......................................................................................................................ix Chapter 1: Introduction..................................................................................................................1 1.1 Scope and overall research contribution..............................................................................1 1.2 Motivation............................................................................................................................2 1.2.1 The interconnect problem .............................................................................................2 1.2.2 Capabilities and limitations of electrical interconnects................................................4 1.2.3 Advantages of optical interconnects ......................................

The physical origin of the excess thermal noise in short channel MOSFETs is explained based on numerical noise simulation. The impedance field representation and extraction method demonstrate that the drain current noise is dominated by source side contributions. Analysis identifies local ac channel resistance variations as the primary controlling factor. The nonlocal nature of velocity results in a smaller derivative of the velocity with respect to the field which in turn causes a higher local ac resistance near the source junction. Index Terms---Hydrodynamics, MOSFETs, semiconductor device modeling, semiconductor device noise, simulation. I.