Silicon integrated circuit spiral inductors and transformers are analyzed using electromagnetic analysis. With appropriate approximations, the calculations are reduced to electrostatic and magnetostatic calculations. The important effects of substrate loss are included in the analysis. Classic circuit analysis and network analysis techniques are used to derive two-port parameters from the circuits. From two-port measurements, loworder, frequency-independent lumped circuits are used to model the physical behavior over a broad-frequency range. The analysis is applied to traditional square and polygon inductors and transformer structures as well as to multilayer metal structures and coupled inductors. A custom computer-aided-design tool called ASITIC is described, which is used for the analysis, design, and optimization of these structures. Measurements taken over a frequency range from 100 MHz to 5 GHz show good agreement with theory.

Rapid growth in the portable communications market has pushed designers to seek low-cost, low-power, highly integrated solutions for the RF transceiver. A number of recent efforts have concentrated on integrating many of the discrete radio receiver components in a low-cost silicon process such as CMOS [1][2]. This paper describes a prototype of a monolithic CMOS receiver that combines RF and baseband functionality by taking the carrier signal at the LNA input and producing a 10-bit digital baseband waveform. A Wide-Band Intermediate Frequency Double Conversion (WBIFDC) architecture is utilized to remove the need for external narrow-band IF filters.

This paper presents an overview of technical challenges in achieving higher integration levels, lower power dissipation, smaller form factor, and lower cost in portable battery-powered RF transceivers for personal communications applications. Specific emphasis is placed on silicon integrated circuits for transceivers in the 800MHz-2.5GHz range of frequencies.

An overview of recent progress in the research and development of micromachined devices for use in wireless communication sub-systems is presented. Among the specific devices described are tunable micromachined capacitors, integrated high-Q inductors, micromachined low-loss microwave and mm-wave filters, low loss micromechanical switches, microscale vibrating mechanical resonators with Q’s in the tens of thousands, and miniature antennas for mm-wave applications. Specific applications are reviewed for each of these components with emphasis on methods for miniaturization and performance enhancement of existing and future wireless transceivers.

Abstract—Third-order, high-, micromechanical bandpass filters comprised of three ratioed folded-beam resonators coupled by flexural mode springs are demonstrated using an integrated circuit compatible, doped polycrystalline silicon surfacemicromachining technology. A complete design procedure for multiresonator micromechanical filters is presented and solidified via an example design. The use of quarter-wavelength coupling beams attached to resonators at velocity-controllable locations is shown to suppress passband distortion due to finite-mass and process mismatch nonidealities, which become increasingly important on this microscale. In addition, low-velocity coupling methods are shown to greatly alleviate the lithographic resolution required to achieve a given percent bandwidth. Ratioed foldedbeam micromechanical resonators are introduced as the key impedance transforming components that enable the needed low-velocity coupling. Using these design techniques, balanced three-resonator microscale mechanical filters with passband frequencies centered around 340 kHz are demonstrated with percent bandwidths of 0.1%, associated insertion losses as small as 0.1 dB, 20-dB shape factors as low as 1.5, and stopband rejections greater than 64 dB. Measurement and theory are rigorously compared and important limitations, such as thermal susceptibility, the need for passband tuning, and inadequate electromechanical coupling, are addressed. [470] Index Terms—Circuit modeling, fabrication, electromechanical coupling, filters, high-, insertion loss, MEMS, microelectromechanical devices, micromachining, micromechanical, passband

The design and optimization of spiral inductors on silicon substrates, the related layout issues in integrated circuits, and the effect of the inductor-Q on the performance of radiofrequency (RF) building blocks are discussed. Integrated spiral inductors with inductances of 0.5--100 nH and Q's up to 40 are shown to be feasible in very-large-scale-integration silicon technology. Circuit design aspects, such as a minimum inductor area, the cross talk between inductors, and the effect of a substrate contact on the inductor characteristics are addressed. Important RF building blocks, such as a bandpass filter, low-noise amplifier, and voltage-controlled oscillator are shown to benefit substantially from an improved inductor-Q.

With Q's in the tens to hundreds of thousands, micromachined vibrating resonators are proposed as IC-compatible tanks for use in the low phase noise oscillators and highly selective filters of communications subsystems. To date, LF oscillators have been fully integrated using merged CMOS+microstructure technologies, and bandpass filters consisting of spring-coupled micromechanical resonators have been demonstrated in the HF range. In particular, tworesonator micromechanical bandpass filters have been demonstrated with frequencies up to 14.5 MHz, percent bandwidths on the order of 0.2%, and insertion losses less than 1 dB. Higher-order three-resonator filters with frequencies near 455 kHz have also been achieved, with equally impressive insertion losses for 0.09% bandwidths, and with more than 64 dB of passband rejection. Evidence suggests that the ultimate frequency range of this high-Q tank technology depends upon material limitations, as well as design constraints ---in particular, to the degree of electromechanical coupling achievable in micro-scale resonators.

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Abstract—In this paper, a closed-form integral representation for the eddy-current losses over a conductive substrate is presented. The results are applicable to monolithic inductors and transformers, especially when such structures are realized over an epitaxial CMOS substrate. The technique is verified against measured results from 100 MHz to 14 GHz for spiral inductors. Index Terms—CMOS substrate losses, eddy currents, monolithic inductors, monolithic transformers, spiral inductors, spiral transformers. I.

A 900 MHz low-noise amplifier (LNA) utilizing three monolithic transformers to implement on-chip tuning networks and requiring no external components has been integrated in 2.88 mm 2 in a standard digital 0.6 m CMOS process. A bias current reuse technique is employed to reduce power dissipation, and process-, voltage-, and temperature-tracking biasing techniques are used. At 900 MHz, the LNA dissipates 18 mW from a single 3 V power supply and provides 4.1 dB noise figure, 12.3 dB power gain, 00033.0 dB reverse isolation, and an input 1-dB compression level of 00016 dBm. Analysis and modeling considerations for silicon-based monolithic transformers are presented, and it is shown that a monolithic transformer occupies less die area and provides a higher quality factor than two independent inductors with the same effective inductance in differential applications. I. INTRODUCTION F INE-LINE CMOS technology easily provides high frequency active devices for use in RF applications (e...