Abstract 1 In this paper we present modeling and simulation for physical vapor deposition for metallic bipolar plates. In the models we discuss the application of different models to simulate the transport of chemical reactions of the gas species in the gas chamber. The so called sputter process is an extremely sensitive process to deposit thin layers to metallic plates. We have taken into account lower order models to obtain first results with respect to the gas fluxes and the kinetics in the chamber. The model equations can be treated analytically in some circumstances and complicated multidimensional models are solved numerically with a software-package (UG unstructed grids, see [1]). Because of multi-scaling and multi-physical behavior of the models, we discuss adapted schemes to solve more accurate in the different domains and scales. The results are discussed with physical experiments to give a valid model for the assumed growth of thin layers. Keywords Convection-diffusion equations, multi-scale problem, physical vapor deposition, reaction equations, splitting methods. AMS subject classifications—35K25, 35K20, 74S10, 70G65. 1.

This article proposes a new approach to the construction of a linearization method based on the iterative operator-splitting method for nonlinear differential equations. The convergence properties of such a method are studied. The main features of the proposed idea are the linearization of nonlinear equations and the application of iterative splitting methods. We present an iterative operator-splitting method with embedded Newton methods to solve nonlinearity. We confirm with numerical applications the effectiveness of the proposed iterative operator-splitting method in comparison with the classical Newton methods. We provide improved results and convergence rates.

The numerous technical applications in electronic and optoelectronic devices, such as lasers, diodes, and sensors, demand high-quality silicon carbide (SiC) bulk single crystal for industrial applications. We consider an SiC crystal growth process by physical vapor transport (PVT), called modified Lely method. We deal with a model for the micro- and macroscales of the sublimation processes within the growth apparatus. The macroscopic model is based on the heat equation with heat sources due to induction heating and nonlocal interface conditions, representing the heat transfer by radiation. The microscopic model is based on the quantum interatomic potential and is computed with molecular dynamics. We study the temperature evolution in the apparatus and reflect the growth behavior of the microscopic model. We present results of some numerical simulations of the micro- and macromodels of our growth apparatus.