A 0.18 µm BiCMOS technology featuring 120/100 GHz (fT /fmax) HBT and ASICcompatible CMOS using copper interconnect (0)

by A Joseph, D Coolbaugh, M Zierak, R Wuthrich, P Geiss, Z He, X Liu, B Orner, J Johnson, G Freeman, D Ahlgren, B Jagannathan, L Lanzerotti, V Ramachandran, J Malinowski, H Chen, J Chu, P Gray, R Johnson, J Dunn, S Subbanna, K Schonenberg, D Harame, R Groves, K Watson, D Jadus, M Meghelli, A Rylyakov
Venue:in Proc. IEEE Bipolar/BiCMOS Circuits and Technology Meeting