A 0.13 µm BiCMOS technology featuring a 200/280 GHz fT /fmax SiGe HBT (0)

by B A Orner, Q Z Liu, B Rainey, A Stricker, P Geiss, P Gray, M Zierak, M Gordon, D Collins, V Ramachandran, W Hodge, C Willets, A Joseph, J Dunn, J-S Rieh
Venue:in Proc. IEEE Bipolar/BiCMOS Circuits and Technology Meeting