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RF CMOS Class C Power Amplifiers for Wireless Communications by Ramakrishna Sekhar Narayanaswami Doctor of Philosophy in Engineering-Electrical Engineering and Computer Sciences University of California, Berkeley Abstract 2 order in order to generate an approximate solution to the design goal before a circuit analysis tool is required. Circuit techniques used to combat the technology limitations imposed by CMOS technologies include the use of differential circuits in the signal path, cascoded stages and a modified tuning method which allowed for the use of extremely large output devices but not requiring passive devices that were not feasible in a CMOS technology.

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key words: RF thin film inductor capacitor bluetooth module RF products require a large number of high-quality passive components to enable them to perform at GHz frequencies. Cost and size targets also put other restrictions on materials and the complexity of technologies used to manufacture these products. Optimization of these factors can be done independently using a System-in-Package (SiP) approach. System partitioning, appropriate integration, and technology selection are critical to developing a competitive module. This paper presents the development of a fully functional Bluetooth module designed using a mix of thin-film, thick-film, flip-chip, and silicon technologies that has competitive size, price, and performance. Planar thin film technology on a ceramic substrate is used for critical inductors and capacitors in the balun and bandpass filter. Inexpensive thick film technology on ceramic with photo-patterned conductors and resistors serves as the base substrate for interconnection of the components. Miniature surface-mounted chip capacitors are used for decoupling. Two silicon IC's are used in the module: a single-chip Bluetooth device and a flash memory for software storage. A packaged crystal oscillator provides the frequency reference. This combination of technologies and components results in one of the smallest modules available. High yield for the individual technologies and known-good components keep costs low. Other benefits arise from use of a SIP: quick product development, ease of customization, and short manufacturing cycle times. The development of this type of module must be supported by high-frequency characterization and parameter extraction methods. Our team has developed good high-frequency modeling and characterization techniques and test structures to support design and development at these frequencies.

! System design and analysis! Antenna design and analysis! LTCC circuit design and analysis! RFIC design and analysis! Conclusion

System design and analysis Antenna design and analysis LTCC circuit design and analysis RFIC design and analysis Conclusion References What is Bluetooth? [1] The Bluetooth system is is a universal radio interface on the globally available 2.4 GHz ISM frequency band facilitating wireless communication of of data and voice in in both stationary and mobile environments to is of to (1) Low-cost Radio based cable replacement…(to)..Provide the basis for portable devices to communicate together …by creating a personal area (wireless) network…Bluetooth is an effort by a consortium of companies to design a royalty-free technology specification enabling this vision. (1) w Given the Bluetooth guidelines, how does this translate to RF specifications? Bluetooth Specifications w Modulation characteristic w GFSK with BT=0.5 w Modulation index: w w