A Scalable High-Frequency Noise Model for Bipolar Transistors with Application to Optimal Transistor Sizing for Low-Noise Amplifier Design (1997)

by S P Voinigescu, M C Maliepaard, J L Showell, G E Babcock, D Marchesan, M Schroter, P Schvan, D Harame
Venue:IEEE J. Solid-State Circuits