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Vivaldi: A Decentralized Network Coordinate System
 In SIGCOMM
, 2004
"... Largescale Internet applications can benefit from an ability to predict roundtrip times to other hosts without having to contact them first. Explicit measurements are often unattractive because the cost of measurement can outweigh the benefits of exploiting proximity information. Vivaldi is a simp ..."
Abstract

Cited by 503 (5 self)
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Largescale Internet applications can benefit from an ability to predict roundtrip times to other hosts without having to contact them first. Explicit measurements are often unattractive because the cost of measurement can outweigh the benefits of exploiting proximity information. Vivaldi is a simple, lightweight algorithm that assigns synthetic coordinates to hosts such that the distance between the coordinates of two hosts accurately predicts the communication latency between the hosts.
SubContinuum Thermal Simulations of Deep SubMicron Devices under ESD Conditions
, 2000
"... The decreasing dimensions of IC devices is rendering the heat diffusion equation highly inaccurate for simulations of electrostatic discharge (ESD) phenomena. As dimensions of the heated region in the device are reduced far below 200 nm, neglecting the ballistic, subcontinuum nature of phonon condu ..."
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The decreasing dimensions of IC devices is rendering the heat diffusion equation highly inaccurate for simulations of electrostatic discharge (ESD) phenomena. As dimensions of the heated region in the device are reduced far below 200 nm, neglecting the ballistic, subcontinuum nature of phonon conduction in the silicon lattice can strongly underpredict the temperature rise. This work integrates the phonon Boltzmann Transport Equation (BTE) in deep submicron silicon devices and presents a general methodology for solving the BTE. The approach developed is applicable to both Si and SOI devices and predicts temperature rises consistent with failure voltage measurements for practical devices. I.
Advanced ElectroThermal Modeling and Simulation Techniques for Deep SubMicron Devices
, 2000
"... The decreasing dimensions of IC devices is rendering the conventional heat diffusion equation highly inaccurate for electrothermal simulations of deep submicron devices. This work integrates the phonon Boltzmann Transport Equation (BTE) in deep submicron silicon devices and presents a general metho ..."
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The decreasing dimensions of IC devices is rendering the conventional heat diffusion equation highly inaccurate for electrothermal simulations of deep submicron devices. This work integrates the phonon Boltzmann Transport Equation (BTE) in deep submicron silicon devices and presents a general methodology for solving the BTE. The approach developed is applicable to both Si bulk and SOI devices and is consistent with failure voltage measurements during electrostatic discharge (ESD) for practical devices. Additionally, local thermal conductivities accounting for phonon boundary scattering at the gate oxide/silicon interface are presented and an implementation is demonstrated in the PROPHET device simulator with full electrothermal coupling. This is the first step toward capturing microscale heat transfer effects of the BTE with a modified heat flow equation, suitable for commercial device simulators.