Abstract — RF circuits exhibit several distinguishing characteristics that make them difficult to simulate

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Abstract—An overview of monolithic radio-frequency (RF) active mixer design is presented. The paper is divided into two parts. The first part discusses the performance parameters that are relevant to the design of downconversion mixers, and how they affect the system performance. The second part presents three common kinds of mixer topologies, namely, unbalanced, singlebalanced, and double-balanced designs. This paper concentrates on active mixers only. The advantages and disadvantages, as well as the design and optimization techniques for the three kinds of mixers, are discussed. Index Terms—Analog integrated circuits, circuit optimization, MIMIC’s, MMIC circuits, mixers, nonlinear circuits. I.

This report details the design process of a RF CMOS Power Amplifier

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This issue of Intel Technology Journal (Volume 8, Issue 3) examines the technologies and standards for WiMAX (Worldwide Interoperability for Microwave Access)—an evolving standard for point-tomultipoint wireless networking—and Intel's research and development efforts in these areas. Inside you’ll find the following papers:

Characterization and modeling of devices at high drive levels often requires specialized equipment and measurement techniques. Many large-signal devices will never have traditional nonlinear models because model development is expensive and timeconsuming. Due to the complexity of the device or the size of the application market, nonlinear modeling efforts may not be cost effective. Scattering parameters, widely used for small-signal passive and active device characterization, have received only cursory consideration for large-signal nonlinear device characterization due to technical and theoretical issues. We review the theory of-parameters, active device characterization, ! and previous efforts to use -parameters with large-signal nonlinear devices. ! A robust, calibrated vector-measurement system is used to obtain device scattering parameters as a function of drive level. The unique measurement system architecture allows meaningful scattering parameter measurements of large-signal nonlinear devices, overcoming limitations reported by previous researchers. A three-port -parameter device model, with a nonlinear reflection coefficient ! terminating the third port, can be extracted from scattering parameters measured as a function of drive level. This three-port model provides excellent agreement with device measurements across a wide range of drive conditions. The model is used to simulate load-pull data for various drive levels which are compared to measured data. To Eva, the light of my life iv ACKNOWLEDGMENTS I am indebted to my advisor, Dr. William A. Davis. His ability to challenge students in the classroom and laboratory has been an inspiration in pursuing this thesis. Dr. Davis has been patient in overseeing my work and instructing me in the details of-para...

This paper reviews (a) recent CMOS demonstrations of capabilities for Radio Frequency (RF), microwave, and millimeter wave circuits from 1 GHz to 100 GHz, (b) advances in on-die isolation structures for integrating radio's delicate circuits with very noisy general-purpose processors on the same die, and (c) entirely novel design methods for complex RF passive networks on the package substrate by engineering the physical design of the package substrate (no discrete passive components added to the package) that diminish the silicon area requirements for multiband multiprotocol CMOS radios and frees silicon area to host complex digital processing and communication engines. Circuit design techniques are discussed to cope with intrinsic CMOS challenges and technology scaling. Building upon these developments, a vision for CMOS technology and platform direction is proposed.

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