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Design of Folded Cascode OTA in Different Regions of Operation through gm/ID Methodology
"... Abstract—This paper presents an optimized methodology to folded cascode operational transconductance amplifier (OTA) design. The design is done in different regions of operation, weak inversion, strong inversion and moderate inversion using the gm/ID methodology in order to optimize MOS transistor s ..."
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Abstract—This paper presents an optimized methodology to folded cascode operational transconductance amplifier (OTA) design. The design is done in different regions of operation, weak inversion, strong inversion and moderate inversion using the gm/ID methodology in order to optimize MOS transistor sizing. Using 0.35µm CMOS process, the designed folded cascode OTA achieves a DC gain of 77.5dB and a unity-gain frequency of 430MHz in strong inversion mode. In moderate inversion mode, it has a 92dB DC gain and provides a gain bandwidth product of around 69MHz. The OTA circuit has a DC gain of 75.5dB and unity-gain frequency limited to 19.14MHZ in weak inversion region. Keywords—CMOS IC design, Folded Cascode OTA, gm/ID methodology, optimization. I.
Analog Circuit Sizing using Adaptive Worst-Case Parameter Sets
, 2002
"... In this paper, a method for nominal design of analog integrated circuits is presented that includes process variations and operating ranges by worst-case parameter sets. These sets are calculated adaptively during the sizing process based on sensitivity analyses. The method leads to robust designs w ..."
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In this paper, a method for nominal design of analog integrated circuits is presented that includes process variations and operating ranges by worst-case parameter sets. These sets are calculated adaptively during the sizing process based on sensitivity analyses. The method leads to robust designs with high parametric yield, while being much more efficient than design centering methods.
Novel Algorithms for Fast Statistical Analysis of Scaled Circuits
, 2007
"... As VLSI technology moves to the nanometer scale for transistor feature sizes, the impact of manufacturing imperfections result in large variations in the circuit performance. Traditional CAD tools are not well-equipped to handle this scenario, since they do not model this statistical nature of the c ..."
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As VLSI technology moves to the nanometer scale for transistor feature sizes, the impact of manufacturing imperfections result in large variations in the circuit performance. Traditional CAD tools are not well-equipped to handle this scenario, since they do not model this statistical nature of the circuit parameters and performances, or if they do, the existing techniques tend to be over-simplified or intractably slow. We draw upon ideas for attacking parallel problems in other technical fields, such as computational finance, machine learning and hydrology, and synthesize them with innovative attacks for our problem domain of integrated circuits, to develop novel solutions to problems of efficient statistical analysis of circuits in the nanometer regime. In particular, this thesis makes three contributions: 1) SiLVR, a nonlinear response surface modeling (RSM) and performance-driven dimensionality reduction strategy, that uses the concepts of projection pursuit and latent variable regression to obtain an absolute improvement in modeling error of up to 34% over the best quadratic RSM method. SiLVR also captures the designer’s insight into the circuit behavior, by automatically extracting quantitative measures of relative

