This article presents the design and reports on the performance properties of the anode region of Silicon Drift Detectors (SDD's) for the Silicon Vertex Tracker (SVT) of the RHIC STAR experiment [1]. The SVT will consist of 216 SDD's. Prototype detectors with bi--directional drift and total area 6.3\Theta6.3

A silicon-on-insulator diode array with a sensitive depth of 10 microns has been developed for microdosimetry in proton therapy. The detector was coupled to a radiation-hard charge sensitive amplifier with the probe assembly capable of measuring a LET down to 1.2 keV/m. The device has been successfully tested at two proton therapy centers: The 230 MeV Northeastern Proton Therapy Center, Boston and the 250 MeV Proton Medical Research Center at Tsukuba, Japan. The device offers much improved spatial resolution compared with a proportional gas counter particularly in the critical high dose region around the proton Bragg peak. Due to its small cross-sectional area (0.04 cm 2 ) measurements may also be made in facilities with short high intensity beams. I. INTRODUCTION Silicon detectors during the last decade have found a wide range of applications in radiation oncology. This has been greatly assisted by the development of detector systems for high energy physics (HEP) in which many adv...

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The CARIOCA front-end is an amplifier discriminator chip, using 0.25Pm CMOS technology, developed with a very fast and low noise preamplifier. This prototype was designed to have input impedance below 10:. Measurements showed a peaking time of 14ns and noise of 450e at zero input capacitance, with a noise slope of 37.4 e /pF. The sensitivity of 8mV/fC remains almost unchanged up to a detector capacitance of 120pF.

A custom monolithic circuit has been developed for the Time Expansion Chamber (TEC) of the PHENIX detector at the Relativistic Heavy Ion Collider (RHIC) at Brookhaven National Laboratory (BNL). This detector identifies particles by sampling their ionization energy loss (dE/dx) over a 3 cm drift space and by detecting associated transition radiation (TR) photons. The requirement of being simultaneously sensitive to dE/dx and TR events requires a dual-gain system. We have developed a compact solution featuring an octal preamplifier/shaper (P/S) IC with a split gain stage. The circuit, fabricated in 1.2 m CMOS process, incorporates a trans-impedance preamplifier and a 70 ns unipolar CR-RC 4 shaper with ion tail compensation and active DC offset cancellation. Digitally selectable gain, peaking time, and tail cancellation as well as channel-by-channel charge injection and disable can be configured in the system via a 3-wire interface. The 3.5 x 5 mm 2 die is packaged in a fine-pitch 64p...

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detection using a cryogenic low noise current

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Gas gain and signal length measurements with a triple-GEM at different pressures of Ar-, Kr- and Xe-based gas mixtures ⋆