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Scaling Optoelectronic-VLSI Circuits into the 21st Century: A Technology Roadmap
, 1996
"... Technologies now exist for implementing dense surface-normal optical interconnections for silicon CMOS VLSI using hybrid integration techniques. The critical factors in determining the performance of the resulting photonic chip are the yield on the transceiver device arrays, the sensitivity and powe ..."
Abstract
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Cited by 24 (7 self)
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Technologies now exist for implementing dense surface-normal optical interconnections for silicon CMOS VLSI using hybrid integration techniques. The critical factors in determining the performance of the resulting photonic chip are the yield on the transceiver device arrays, the sensitivity and power dissipation of the receiver and transmitter circuits, and the total optical power budget available. The use of GaAs--AlGaAs multiple-quantum-well p-i-n diodes for on-chip detection and modulation is one effective means of implementing the optoelectronic transceivers. We discuss a potential roadmap for the scaling of this hybrid optoelectronic VLSI technology as CMOS linewidths shrink and the characteristics of the hybrid optoelectronic tranceiver technology improve. An important general conclusion is that, unlike electrical interconnects, such dense optical interconnections directly to an electronic circuit will likely be able to scale in capacity to match the improved performance of futur...
A physical alpha-power law MOSFET model
- IEEE J. Solid-State Circuits
, 1999
"... Abstract — A new compact physics-based alpha-power law MOSFET model is introduced to enable projections of low power circuit performance for future generations of technology by linking the simple mathematical expressions of the original alpha-power law model with their physical origins. The new mode ..."
Abstract
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Cited by 6 (0 self)
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Abstract — A new compact physics-based alpha-power law MOSFET model is introduced to enable projections of low power circuit performance for future generations of technology by linking the simple mathematical expressions of the original alpha-power law model with their physical origins. The new model, verified by HSPICE simulations and measured data, includes: 1) a subthreshold region of operation for evaluating the on/off current tradeoff that becomes a dominant low power design issue as technology scales, 2) the effects of vertical and lateral high field mobility degradation and velocity saturation, and 3) threshold voltage roll-off. Model projections for MOSFET CV/I indicate a 2X-performance opportunity compared to the National Technology Roadmap for Semiconductors (NTRS) extrapolations for the 250, 180, and 150 nm generations subject to maximum leakage current estimates of the roadmap. NTRS and model calculations converge at the 70 nm technology generation, which exhibits pronounced on/off current interdependence for low power gigascale integration. Index Terms—Alpha-power law, circuit design, CMOS, gigascale integration, physics-based model, technology projections.

