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Approximating the Universal Active Element
, 2000
"... The classification of universal amplifiers presented in this paper places all operational amplifiers and current conveyors known from the literature into a common framework, together with abstract concepts such as the universal active element and the nullor. Our approach is new in that we base it on ..."
Abstract
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Cited by 6 (3 self)
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The classification of universal amplifiers presented in this paper places all operational amplifiers and current conveyors known from the literature into a common framework, together with abstract concepts such as the universal active element and the nullor. Our approach is new in that we base it on four-terminal theory, which results in a classification that is more extensive but not more complex than classifications derived using two-port theory. It turns out that our classification contains a new type of operational amplifier, which we call current-feedback operational transconductance amplifier (CFB OTA), and also a new class of voltage-inverting current conveyors. We then demonstrate that our classification is very closely related to integrated-amplifier design by showing how all operational amplifiers and current conveyors can be implemented in CMOS using only a few CMOS circuits. Since the basic ideas behind CMOS and bipolar circuits are very similar, this paper is not process specific and can be seen as an attempt to bridge the gap between amplifier theory and amplifier design that has become ever wider in the past few years.
A Fully Integrated, Low Noise and Low Power BiCMOS Front-end Readout System for Capacitive Detectors
"... Bipolar transistors are interesting for low noise front-end readout systems when high speed and low power consumption are required. This paper presents a fully integrated, low noise front-end design for the future Large Hadron Collider (LHC) experiments using the radiation hard SOI BiCMOS process. I ..."
Abstract
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Bipolar transistors are interesting for low noise front-end readout systems when high speed and low power consumption are required. This paper presents a fully integrated, low noise front-end design for the future Large Hadron Collider (LHC) experiments using the radiation hard SOI BiCMOS process. In the present prototype, the input-referred Equivalent Noise Charge (ENC) of 990 electrons (rms) for 12 pF detector capacitance with a shaping time of 25 ns and power consumption of 1.4 mW/channel has been measured. The gain of this front-end is 90 mV/MIP (Minimum Ionisation Particle: 1 MIP= 3.84 fC) with non-linearity of less than 3% and linear input dynamic range is 5 MIP. These results are obtained at room temperature and before irradiation. The measurements after irradiations by high intensity pion beam with an integrated flux of 1.0 10 14 pions/cm 2 are also presented in this paper.

