This paper provides an overview of research developments toward nanometer-scale electronic switching devices for use in building ultra-densely integrated electronic computers. Specifically, two classes of alternatives to the field-effect transistor are considered: 1) quantum-effect and single-electron solid-state devices and 2) molecular electronic devices. A taxonomy of devices in each class is provided, operational principles are described and compared for the various types of devices, and the literature about each is surveyed. This information is presented in nonmathematical terms intended for a general, technically interested readership

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of the Dissertation Numerical Study of Single-Electron Effects in Systems of Small Tunnel Junctions by Leonardo Ribeiro de Carvalho e Fonseca Doctor of Philosophy in Applied Mathematics and Statistics State University of New York at Stony Brook 1996 We describe a new and efficient method for the numerical study of the dynamics and statistics of single-electron systems presenting arbitrary combinations of small tunnel junctions, capacitances, and voltage sources. The method is based on numerical solution of a linear matrix equation for the vector of probabilities of the most important electric charge states of the system, with iterative account of new states. The method is able to describe very small deviations from the ideal behavior of a system, due to finite speed of applied signals, thermal activation, and macroscopic quantum tunneling of charge (cotunneling). The code is portable iii accross a number of UNIX based platforms, including the Intel ipsc/860 and Paragon parallel comp...

For many decades, nanotechnology has been developed with cooperation from researchers in several fields of studies including physics, chemistry, biology, material science, engineering, and computer science. In this chapter, we explore the nanotechnology development community and identify the needs and opportunities of computer science research in nanotechnology. In particular we look at methods for programming future nanotechnology, examining the capabilities offered by simulations and intelligent systems. This chapter is intended to benefit computer scientists who are keen to contribute their works to the field of nanotechnology and also nanotechnologists from other fields by making them aware of the opportunities from computer science. It is hoped that this may lead to the

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Abstract—In this paper, we review the current status of nanoelectronic devices based on quantum effects such as quantization of motion and interference, and those based on single electron charging phenomena in ultrasmall structures. In the first part, we discuss wave-behavior in quantum semiconductor structures, and several device structures based on quantum waveguide behavior such as stub tuners, Y-branches, and quantum ratchets. Discussion is also given of proposals for use of interference phenomena in quantum computing followed by the issue of quantum decoherence which ultimately limits utilization of quantum effects. In the second part, we discuss single electron effects such as Coulomb blockade, and associated devices such as the single electron transistor and single electron charge pumps. This is followed by an overview of some recent work focusing on Si based single electron structures. We conclude with a discussion of proposals and realizations for single-electron circuits and architectures including single electron memories, single electron logic, and single electron cellular nonlinear networks. Index Terms—Ballistic devices, nanoelectronics, quantum devices, single-electron transistors and circuits, single-electron tunneling. I.