This paper provides an overview of research developments toward nanometer-scale electronic switching devices for use in building ultra-densely integrated electronic computers. Specifically, two classes of alternatives to the field-effect transistor are considered: 1) quantum-effect and single-electron solid-state devices and 2) molecular electronic devices. A taxonomy of devices in each class is provided, operational principles are described and compared for the various types of devices, and the literature about each is surveyed. This information is presented in nonmathematical terms intended for a general, technically interested readership

The resonant tunneling diode (RTD) has been widely studied because of its importance in the field of nanoelectronic science and technology and its potential applications in very high speed/functionality devices and circuits. Even though much progress has been made in this regard, additional work is needed to realize the full potential of RTD’s. As research on RTD’s continues, we will try in this tutorial review to provide the reader with an overall and succinct picture of where we stand in this exciting field of research and to address the following questions: What makes RTD’s so attractive? To what extent can RTD’s be modeled for design purposes? What are the required and achievable device properties in terms of digital logic applications? To address these issues, we review the device operational principles, various modeling approaches, and major device properties. Comparisons among the various RTD physical models and major features of RTD’s, resonant interband tunneling diodes, and Esaki tunnel diodes are presented. The tutorial and analysis provided in this paper may help the reader in becoming familiar with current research efforts, as well as to examine the important aspects in further RTD developments and their circuit applications.

It is expected that nano-scale devices and interconnections will introduce unprecedented level of defects in the substrates, and architectural designs need to accommodate the uncertainty inherent at such scales. This consideration motivates the search for new architectural paradigms based on redundancy based defect-tolerant designs. However, redundancy is not always a solution to the reliability problem, and often too much or too little redundancy may cause degradation in reliability. The key challenge is in determining the granularity at which defect tolerance is designed, and the level of redundancy to achieve a specific level of reliability. Analytical probabilistic models to evaluate such reliability-redundancy trade-o#s are error prone and cumbersome, and do not scale well for complex networks of gates. In this thesis we develop different tools and techniques that can evaluate the reliability measures of combinational circuits, and can be used to analyze reliability-redundancy trade-offs for different defect-tolerant architectural configurations. In particular, we have developed two tools, one of which is based on probabilistic model checking and is named NANOPRISM, and another MATLAB based tool called NANOLAB. We also illustrate the effectiveness of our reliability analysis tools by pointing out certain anomalies which are counter-intuitive but can be easily discovered by these tools, thereby providing better insight into defecttolerant design decisions. We believe that these tools will help furthering research and pedagogical interests in this area, expedite the reliability analysis process and enhance the accuracy of establishing reliability-redundancy trade-off points.