...................................................................................................................................... viii List of publications .......................................................................................................................ix Chapter 1: Introduction..................................................................................................................1 1.1 Scope and overall research contribution..............................................................................1 1.2 Motivation............................................................................................................................2 1.2.1 The interconnect problem .............................................................................................2 1.2.2 Capabilities and limitations of electrical interconnects................................................4 1.2.3 Advantages of optical interconnects ......................................

A new compact model for MOS transistors has been developed, MOS Model 11 (MM11), the successor of MOS Model 9. MM11 not only gives an accurate description of charges and currents and their first-order derivatives (transconductance, conductance, capacitances), but also of their higherorder derivatives. In other words it gives an accurate description of MOSFET distortion behaviour, and as such MM11 is suitable for digital, analog as well as RF circuit design. MOS Model 11 is a symmetrical, surface-potential-based model. It includes an accurate description of all physical effects important for modern and future CMOS technologies, such as e.g. gate tunnelling current, influence of pocket implants, poly-depletion, quantum-mechanical effects and bias-dependent overlap capacitances. The goal of this report is to present the full definition of the model, including the parameter set, the geometrical and temperature scaling rules, the model implementation, and all the equations for currents, charges and noise sources. Apart from the definition also an introduction into the physical background is given, and a basic parameter extraction procedure is described. The complete physical background will be documented separately in a forthcoming report.

Mextram 504 is the new version of the Philips compact model for bipolar transistors. This document contains the derivation of all the equations that are part of the model. This includes the description of the equivalent circuit of Mextram, the equations for the currents and the charges, the temperature-scaling model, the way self-heating is handled, and the noise model. We then discuss some small-signal approximations and the basis of geometric scaling.

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