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Easy And Accurate Empirical Transistor Model Parameter Estimation From Vectorial LargeSignal Measurements
 IEEE Int. Microwave Symposium Digest
, 1999
"... The standard empirical nonlinear model parameter estimation is often cumbersome as several measurement systems are involved. We show that the model generation complexity can be reduced tremendously by only using full twoport vectorial largesignal measurements. Furthermore realistic operating cond ..."
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Cited by 6 (6 self)
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The standard empirical nonlinear model parameter estimation is often cumbersome as several measurement systems are involved. We show that the model generation complexity can be reduced tremendously by only using full twoport vectorial largesignal measurements. Furthermore realistic operating conditions can easily be included in the optimisation procedure, as we illustrate on GaAs PHEMTs. INTRODUCTION In recent years, the development of different vectorial largesignal prototype measurement systems, e.g., [1,2,3], has worldwide initiated researchers to investigate the implications of the additional measurement information on the ease and accuracy of nonlinear model extraction. In general, we can distinguish two main approaches. The first category studies methods to efficiently extract the device's nonlinear statefunctions directly from these measurements [4]. The goal of the second category is to utilise the vectorial largesignal measurements to enhance the existing nonlinear...
Straightforward and Accurate Nonlinear Device Model ParameterEstimation Method Based on Vectorial LargeSignal Measurements
, 2002
"... To model nonlinear device behavior at microwave frequencies, accurate largesignal models are required. However, the standard procedure to estimate model parameters is often cumbersome, as it involves several measurement systems (dc, vector network analyzer, etc.). Therefore, we propose a new nonlin ..."
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Cited by 1 (0 self)
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To model nonlinear device behavior at microwave frequencies, accurate largesignal models are required. However, the standard procedure to estimate model parameters is often cumbersome, as it involves several measurement systems (dc, vector network analyzer, etc.). Therefore, we propose a new nonlinear modeling technique, which reduces the complexity of the model generation tremendously and only requires full twoport vectorial largesignal measurements. This paper reports on the results obtained with this new modeling technique applied to both empirical and artificialneuralnetwork device models. Experimental results are given for high electronmobility transistors and MOSFETs. We also show that realistic signal excitations can easily be included in the optimization process.
The Frequency Domain Behavioral Modeling and Simulation of Nonlinear Analog Circuits and Systems
, 1993
"... LUNSFORD II, PHILIP J. The Frequency Domain Behavioral Modeling and Simulation of Nonlinear Analog Circuits and Systems. (Under the direction of Michael B. Steer.) A new technique for the frequencydomain behavioral modeling and simulation of nonautonomous nonlinear analog subsystems is presented. ..."
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LUNSFORD II, PHILIP J. The Frequency Domain Behavioral Modeling and Simulation of Nonlinear Analog Circuits and Systems. (Under the direction of Michael B. Steer.) A new technique for the frequencydomain behavioral modeling and simulation of nonautonomous nonlinear analog subsystems is presented. This technique extracts values of the Volterra nonlinear transfer functions and stores these values in binary files. Using these files, the modeled substem can be simulated for an arbitrary periodic input expressed as a finite sum of sines and cosines. Furthermore, the extraction can be based on any circuit simulator that is capable of steady state simulation. Thus a large system can be divided into smaller subsystems, each of which is characterized by circuit level simulations or lab measurements. The total system can then be simulated using the subsystem characterization stored as tables in binary files.
PhysicsBased Electron Device Modelling and ComputerAided MMIC Design
, 1992
"... The paper provides an overview on the state of the art and future trends in physicsbased electron device modelling for the computeraided design of monolithic microwave IC’s. After a review of the main physicsbased approaches to microwave modelling, special emphasis is placed on innovative develo ..."
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The paper provides an overview on the state of the art and future trends in physicsbased electron device modelling for the computeraided design of monolithic microwave IC’s. After a review of the main physicsbased approaches to microwave modelling, special emphasis is placed on innovative developments relevant to circuitoriented device performance assessment, such as efficient physicsbased noise and parametric sensitivity analysis. The use of stateoftheart physicsbased analytical or numerical models for circuit analysis is discussed, with particular attention to the role of intermediate behavioural models in linking multidimensional device simulators with circuit analysis tools. Finally, the model requirements for yielddriven MMIC design are discussed, with the aim of pointing out the advantages of physicsbased statistical device modelling; the possible use of computationally efficient approaches based on device sensitivity analysis for yield optimization is also considered.
DesignMeasurement, Modeling and CAE
"... This paper explains and illustrates that the voltage–current behavior of nonlinear devices, components and systems is the basis for a framework for the large signal RF and microwave design and manufacturing process. This framework spans measurement, modeling and CAE technology in a coherent way. 2 ..."
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This paper explains and illustrates that the voltage–current behavior of nonlinear devices, components and systems is the basis for a framework for the large signal RF and microwave design and manufacturing process. This framework spans measurement, modeling and CAE technology in a coherent way. 2
PARAMETER ESTIMATION FROM VECTORIAL LARGESIGNAL MEASUREMENTS
"... © 1999 IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other w ..."
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© 1999 IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE. EASY AND ACCURATE EMPIRICAL TRANSISTOR MODEL