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On Computing Addition Related Arithmetic Operations via Controlled Transport Of Charge
 IEEE TRANSACTIONS OF COMPUTERS
, 2005
"... In this paper we investigate the implementation of basic arithmetic functions, such as addition and multiplication, in Single Electron Tunneling (SET) technology. First, we describe the SET equivalent of two conventional design styles, namely the equivalents of Boolean CMOS and threshold logic gates ..."
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Cited by 17 (12 self)
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In this paper we investigate the implementation of basic arithmetic functions, such as addition and multiplication, in Single Electron Tunneling (SET) technology. First, we describe the SET equivalent of two conventional design styles, namely the equivalents of Boolean CMOS and threshold logic gates. Second, we propose a set of building blocks, which can be utilized for a novel design style, namely arithmetic operations performed by direct manipulation of the location of individual electrons within the system. Using this new set of building blocks, we propose several novel approaches for computing addition related arithmetic operations via the controlled transport of charge (individual electrons). In particular, we prove the following: nbit addition can be implemented with a depth2 network built with O(n) circuit elements; ninput parity can be computed with a depth2 network constructed with O(n) circuit elements and the same applies for nj log n counters; multiple operand addition of m nbit operands can be implemented with a depth2 network using O(mn) circuit elements; and finally nbit multiplication can be implemented with a depth3 network built with O(n) circuit elements.
Overview of Nanoelectronic Devices
 Proceedings of the IEEE
, 1997
"... This paper provides an overview of research developments toward nanometerscale electronic switching devices for use in building ultradensely integrated electronic computers. Specifically, two classes of alternatives to the fieldeffect transistor are considered: 1) quantumeffect and singleelectr ..."
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Cited by 11 (1 self)
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This paper provides an overview of research developments toward nanometerscale electronic switching devices for use in building ultradensely integrated electronic computers. Specifically, two classes of alternatives to the fieldeffect transistor are considered: 1) quantumeffect and singleelectron solidstate devices and 2) molecular electronic devices. A taxonomy of devices in each class is provided, operational principles are described and compared for the various types of devices, and the literature about each is surveyed. This information is presented in nonmathematical terms intended for a general, technically interested readership
Aspects of Systems and Circuits for Nanoelectronics
 PROCEEDINGS OF THE IEEE
, 1997
"... This paper analyzes the effect of this technological progress on the design of nanoelectronic circuits and describes computational paradigms revealing novel features such as distributed storage, fault tolerance, selforganization, and local processing. In particular, linear threshold networks, the a ..."
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Cited by 10 (4 self)
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This paper analyzes the effect of this technological progress on the design of nanoelectronic circuits and describes computational paradigms revealing novel features such as distributed storage, fault tolerance, selforganization, and local processing. In particular, linear threshold networks, the associative matrix, selforganizing feature maps, and cellular arrays are investigated from the viewpoint of their potential significance for nanoelectronics. Although these concepts have already been implemented using present technologies, the intention of this paper is to give an impression of their usefulness to system implementations with quantumeffect devices.
Temperature
, 2005
"... dependence of the locked mode in a singleelectron latch ..."
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Cited by 1 (0 self)
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dependence of the locked mode in a singleelectron latch
Numerical Study of SingleElectron Effects in Systems of Small Tunnel Junctions
, 1996
"... of the Dissertation Numerical Study of SingleElectron Effects in Systems of Small Tunnel Junctions by Leonardo Ribeiro de Carvalho e Fonseca Doctor of Philosophy in Applied Mathematics and Statistics State University of New York at Stony Brook 1996 We describe a new and efficient method for the nu ..."
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of the Dissertation Numerical Study of SingleElectron Effects in Systems of Small Tunnel Junctions by Leonardo Ribeiro de Carvalho e Fonseca Doctor of Philosophy in Applied Mathematics and Statistics State University of New York at Stony Brook 1996 We describe a new and efficient method for the numerical study of the dynamics and statistics of singleelectron systems presenting arbitrary combinations of small tunnel junctions, capacitances, and voltage sources. The method is based on numerical solution of a linear matrix equation for the vector of probabilities of the most important electric charge states of the system, with iterative account of new states. The method is able to describe very small deviations from the ideal behavior of a system, due to finite speed of applied signals, thermal activation, and macroscopic quantum tunneling of charge (cotunneling). The code is portable iii accross a number of UNIX based platforms, including the Intel ipsc/860 and Paragon parallel comp...
Simulating SET circuits using SPICE
, 2001
"... With singleelectron tunneling (SET) technology it is possible to build electronic circuits with extreme low power properties. These SET circuits must therefore operate in the single electronics (current) regime. To simulate SET circuits in this regime, a SPICE (Simulation Program with Integrated Ci ..."
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With singleelectron tunneling (SET) technology it is possible to build electronic circuits with extreme low power properties. These SET circuits must therefore operate in the single electronics (current) regime. To simulate SET circuits in this regime, a SPICE (Simulation Program with Integrated Circuit Emphasis) model has been written In contrast to, the prescriptions in the socalled Orthodox theory of singleelectronics the SPICE model explores the discrete character of the tunnel current and the tunnel condition. In this paper known SET circuits are simulated using this SPICE model and verified with the Orthodox theory of SET. The results are also compared with a famous SET circuit simulator Simon.
Some Outlines of Circuit Applications for a SingleElectron 2Island Subcircuit
, 2001
"... To benefit from the reduction of the devices ' feature sizes new circuit concepts can be introduced. These new circuits will require new devices, such as singleelectronic devices. Singleelectronics devices are capable of controlling the transport of only one electron. In this manner, the charge tra ..."
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To benefit from the reduction of the devices ' feature sizes new circuit concepts can be introduced. These new circuits will require new devices, such as singleelectronic devices. Singleelectronics devices are capable of controlling the transport of only one electron. In this manner, the charge transfer through the device is quantized. However, singleelectronics is still a highly experimental technology. As an example of singleelectronics we discuss circuits based on the socalled singleelectron tunneling (SET) device, including tunnel junctions.
On Effective Computation with Single Electron Tunnelling Devices
"... It is generally accepted that fundamental physical limitations will eventually inhibit further (C)MOS feature size reduction. Several emerging nanoelectronic technologies with greater scaling potential, such as Single Electron Tunnelling (SET), are currently under investigation. Each of those exhib ..."
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It is generally accepted that fundamental physical limitations will eventually inhibit further (C)MOS feature size reduction. Several emerging nanoelectronic technologies with greater scaling potential, such as Single Electron Tunnelling (SET), are currently under investigation. Each of those exhibits its own switching behavior, resulting in new paradigms for logic design and computation. This paper presents an analysis of various design styles that might be potentially utilized in conjunction with SET devices. We discuss and compare three different SET designs styles as follows: CMOSalike logic, based on SET transistors; Single Electron Encoded Logic, based on threshold gates that utilize the intrinsic behavior of SET tunnel junctions; Electron Counting logic, based on direct encoding of integers as charge combined with computation via charge transport. Our analysis clearly indicate that the last two approaches are more promising as they make a better use of the specific properties and behavior of the SET devices. 1.
ON EFFECTIVE COMPUTATION WITH NANODEVICES: A SINGLE ELECTRON TUNNELLING TECHNOLOGY CASE STUDY
"... It is generally accepted that fundamental physical limitations will eventually inhibit further (C)MOS feature size reduction. Several emerging nanoelectronic technologies with greater scaling potential, such as Single Electron Tunneling (SET), are currently under investigation. Each of these exhibi ..."
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It is generally accepted that fundamental physical limitations will eventually inhibit further (C)MOS feature size reduction. Several emerging nanoelectronic technologies with greater scaling potential, such as Single Electron Tunneling (SET), are currently under investigation. Each of these exhibit their own switching behavior, resulting in new paradigms for logic design and computation. This paper presents a case study on SET based logic. We analyze and compare three different SET designs styles as follows. First, SET transistor based designs that mimic conventional CMOS. Second, single electron threshold logic based on the voltage threshold of SET tunnel junctions. Third, electron counting logic based on direct encoding of integers as charge combined with computation via charge transport. 1.
QuantumEffect and SingleElectron Devices
"... Abstract—In this paper, we review the current status of nanoelectronic devices based on quantum effects such as quantization of motion and interference, and those based on single electron charging phenomena in ultrasmall structures. In the first part, we discuss wavebehavior in quantum semiconducto ..."
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Abstract—In this paper, we review the current status of nanoelectronic devices based on quantum effects such as quantization of motion and interference, and those based on single electron charging phenomena in ultrasmall structures. In the first part, we discuss wavebehavior in quantum semiconductor structures, and several device structures based on quantum waveguide behavior such as stub tuners, Ybranches, and quantum ratchets. Discussion is also given of proposals for use of interference phenomena in quantum computing followed by the issue of quantum decoherence which ultimately limits utilization of quantum effects. In the second part, we discuss single electron effects such as Coulomb blockade, and associated devices such as the single electron transistor and single electron charge pumps. This is followed by an overview of some recent work focusing on Si based single electron structures. We conclude with a discussion of proposals and realizations for singleelectron circuits and architectures including single electron memories, single electron logic, and single electron cellular nonlinear networks. Index Terms—Ballistic devices, nanoelectronics, quantum devices, singleelectron transistors and circuits, singleelectron tunneling. I.