”, and this is a major focus of our work in the Gigascale Silicon Research Center. We present some important concepts for system design that are likely to provide at least some of the gains in productivity postulated above. In particular, we focus on a method that separates parts of the design process and makes

at 700 to 900 ~ A 700 A buried CoSi2-1ayer, with a resistivity of approximately 21 ~ cm, was achieved. Good adhesion, as measured by tensile strength testing, between the wafers was achieved. Transmission electron microscopic investigations (Co-coated wafer bonded to bare silicon) showed

Abstract A chemical vapor deposition reactor for producing thin silicon films was designed and developed for achieving a new electronic device production system, the Minimal Manufacturing, using a half-inch wafer. This system requires a rapid process by a small footprint reactor. This was designed

with redistribution layers and TSV. I. DRIVERS FOR 3D SYSTEM INTEGRATION Since several years packaging is driven by System in Package (SiP) solutions to meet the requirements of improved performance, miniaturization and cost reduction. This leads to a number of technologies where 3D system integration is one

The paper reports on new manufacturing concepts for handling and processing of thin semiconductor substrates. Technologies which were formerly demonstrated for silicon wafers were recently transferred to GaAs substrates and are presented in this paper. As a result of the development work

Abstract − The emissivity behaviour of a silicon wafer under various conditions was theoretically and experimentally investigated. As a result, the quantitative relationship between the ratio of p-polarized radiance to s-polarized one, and polarized emissivities was obtained irrespective

Abstract SiGe offers a low-cost alternative to conventional infrared sensor material systems such as InGaAs, InSb, and HgCdTe for developing near-infrared (NIR) photodetector devices that do not require cooling and can operate with relatively low dark current. As a result of the significant

rather than getting cheaper solar cell from the manufacturer, there is a new growing trend to reduce the silicon wafer thickness from 200micron to 180 micron and future to 150 micron later and leading to new technical challenges related to manufacturing process. Specifically on wafer breakage during

Three-dimensional (3D) integration of integrated circuits is a key challenge for the future evolution of semiconductor systems. Through silicon vias (TSV) are an integral component for interconnecting stacked circuits. For the fabrication of TSVs, a sequence of processing steps is required

Abstract- The paper introduces a new Controlled Punch Through (CPT) IGBT buffer for next generation devices, which utilise thin wafers technology. The new concept is based on very shallow buffers with optimized doping profiles enabling minimum silicon design thicknesses close to the theoretical