Abstract not found

lithography and process techniques have been coming up in the recent decade, such as fin based multiple-gate field-effect (FinFET) transistors, electron beam lithog-raphy (EBL), self-aligned double patterning (SADP) lithography, directed self-assembly (DSA), extreme ultraviolet lithography (EUVL), etc. Each

This thesis explores the design and analysis of Static Random Access Memories (SRAMs), focusing on optimizing delay and power. The SRAM access path is split into two portions: from address input to word line rise (the row decoder) and from word line rise to data output (the read data path

193nm immersion lithography has become a primary contender for the technology of choice for next generation lithography, with many technologists predicting it will be capable of taking the semiconductor industry to the 45nm, or even the 32nm manufacturing nodes. 2005 saw considerable breakthroughs

At present, the battery is employed as a power source for wide varieties of microelectronic systems ranging from biomedical implants and sensor net-works to portable devices. However, the battery has several limitations and incurs many challenges for the majority of these systems. For instance

Copyright c ⃝ 2010 by Hsin-I Liu1 Architecture and Hardware Design of Lossless Compression Algorithms for Direct-Write

methodologies for modelling the impact of

Abstract—Double patterning lithography (DPL) provides an attractive alternative or a supplementary method to enable the 32nm and 22nm process nodes, relative to costlier technology options such as high refractive index materials, extreme ultraviolet (EUV), or e-beam lithography. DPL implements

On the cover (top to bottom): Joseph Hodges operating frequency-stabilized cavity ring-down spectroscopy (CRDS) for measuring very low concentration contaminants in process gases. Time-resolved vertical distribution of optical emission at 750 nm from a dual-frequency capacitively-coupled plasma

Abstract not found