Searching for authors named "Andreas Schenk" – sorted by Relevance.
22 documents found, showing 1 through 10.
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Re-examination of Physical Models in the Temperature Range 300 K - 700 K
- …Re-examination of Physical Models in the Temperature Range 300 K -- 700 K Andreas Schenk 1…
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Finite-Temperature Full Random-Phase Approximation Model of Band Gap Narrowing for Silicon Device Simulation
- … Simulation Andreas Schenk An analytical model of the band gap narrowing (BGN) in silicon was derived from a…
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Modeling Tunneling through Ultra-Thin Gate Oxides
- …Modeling Tunneling through Ultra-Thin Gate Oxides Andreas Schenk Integrated Systems Laboratory…
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Ac, AM
- … ANALYTICAL MODEL OF THE METAL-SEMICONDUCTOR CONTACT BEYOND THE WKB APPROXIMATION ANDREAS SCHENK Swiss Federal…
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Effect of the Tunneling Rates on the Conductance Characteristics of Single-Electron Transistors
- … SCHENK y , and Wolfgang FICHTNER y , Nonmembers SUMMARY We present calculations of the linear…
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Simulation of the Gate Current Sensitivity of a 1.5 nm Gate Oxide nMOST
- … and Andreas Schenk Technical Report 02/99 1. Integrated Systems Engineering AG Zurich Abstract Scaled MOS…
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Simulation of DGSOI MOSFETs with a Schrödinger-Poisson Based Mobility Model
- …Simulation of DGSOI MOSFETs with a Schrdinger-Poisson Based Mobility Model Andreas Schenk 1…
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Two-Dimensional Tunneling Effects on the Leakage Current of MOSFETs With Single Dielectric and High-κ Gate Stacks
- … and Andreas Schenk Abstract—The gate leakage currents of single-gate silicon-oninsulator (SOI) n-type MOSFETs…
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Atomistic Simulation of Nanowire Transistors
- …Atomistic Simulation of Nanowire Transistors Mathieu Luisier 1,∗ and Andreas Schenk 1,2 1…
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Limitations of the Effective Mass Approximation: A Specific Example
- … Schenk 1,2 1 Integrated Systems Laboratory, ETH Zurich, Gloriastrasse 35, CH-8092, Switzerland, (esposito…
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